X-On Electronics has gained recognition as a prominent supplier of AM1TR-G RF Amplifier across the USA, India, Europe, Australia, and various other global locations. AM1TR-G RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

AM1TR-G Qorvo

AM1TR-G electronic component of Qorvo
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Part No.AM1TR-G
Manufacturer: Qorvo
Category: RF Amplifier
Description: AM1TRG triquint semiconductor amplifier rf integrated circuits ics semiconductors
Datasheet: AM1TR-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.2392 ea
Line Total: USD 1239.2 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.2392

   
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RoHS - XON
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We are delighted to provide the AM1TR-G from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AM1TR-G and other electronic components in the RF Amplifier category and beyond.

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AM1 High Dynamic Range Gain Block Product Features Product Description Functional Diagram GND The AM1 is a general-purpose gain block that offers good 60 3000 MHz dynamic range and low noise figure in a low-cost surface- 4 14 dB Gain mount package. The combination of near-constant OIP3 2.4 dB Noise Figure and low noise figure performance over frequency makes it attractive for both narrowband and broadband applications. +39 dBm OIP3 The device combines dependable performance with superb Single +3.3 or +4.5 Supply quality to maintain MTTF values exceeding 1000 years at 1 23 Internally matched to 50 mounting temperatures of +85 C and is available in the RF IN GND RF OUT environmentally-friendly lead-free/green/RoHS-compliant Lead-free/Green/RoHS- SOT-89 package. compliant SOT-89 Package Function Pin No. MTTF > 1000 years The AM1 uses a high reliability GaAs MMIC technology Input 1 and only requires DC-blocking and bypass capacitors, and Output/Bias 3 an inductive RF choke for operation. Internal matching Ground 2, 4 Applications provides a 50 ohm input / output impedance minimizing the number of required external components. Mobile Infrastructure CATV / DBS The broadband MMIC amplifier is well suited for various current and next generation wireless technologies such as W-LAN / ISM GPRS, GSM, CDMA, and W-CDMA. In addition, the RFID AM1 will work for other applications within the 60 to 3000 MHz frequency range such as fixed wireless. Defense / Homeland Security Fixed Wireless (1) (4) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 60 3000 Frequency MHz 900 1900 900 1900 Test Frequency MHz 800 S21 dB 14 12.8 14 12.5 (5) Gain dB 13 14 16 S11 dB -10 -9 -10 -9 (5) Input Return Loss dB 8.5 S22 dB -27 -22 -28 -19 Output Return Loss dB 20 Output P1dB dBm +18 +18 +16 +16 Output P1dB dBm +18 Output IP3 dBm +39 +39 +38 +38 (2) Output IP3 dBm +36 +39 Noise Figure dB 2.4 2.6 2.3 2.6 (3) Noise Figure dB 2.4 Supply Voltage V +4.5 +3.3 Operating Current Range mA 55 100 Device Current mA 78 75 78 Supply Voltage V 4.5 4. Parameters reflect performance in an AM1-PCB application circuit, as shown on page 4. 5. Input return loss can be dramatically improved (<-20 dB) for narrowband applications as shown on 1. Test conditions unless otherwise noted: T = 25 C, 50 system. page 5 of this datasheet. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +150 C DC Voltage +5.5 V Part No. Description RF Input Power (continuous) +7 dBm High Dynamic Range Gain Block AM1-G Junction Temperature +160 C (lead-free/green/RoHS-compliant SOT-89 Pkg) AM1-PCB 0.8 2.6 GHz Fully Assembled Application Circuit Thermal Resistance, Rth 88 C / W Standard T/R size = 1000 pieces on a 7 reel. Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 6 January 2008 AM1 High Dynamic Range Gain Block Typical Device Data S-Parameters (V = +4.5 V, I = 78mA, T = 25 C, 50 ohm system) DS DS Input return loss can be improved with the appropriate input matching network shown later in this datasheet. Gain vs. Frequency S11 vs. Frequency S22 vs. Frequency 16 0 0 -40c +25c +85c -5 14 -10 -10 12 -15 -20 10 -20 -30 8 -25 -40c +25c +85c -40c +25c +85c 6 -30 -40 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power frequency = 900 MHz, Temp = +25 C frequency = 1900 MHz, Temp = +25 C 6 14 22 14 22 Output Power Output Power 5 12 20 12 20 Gain 4 Gain 10 18 10 18 3 8 16 8 16 2 1 6 14 6 14 0 4 12 4 12 0 500 1000 1500 2000 2500 3000 0246 8 10 12 14 0246 8 10 12 14 Frequency (MHz) Input Power (dBm) Input Power (dBm) ACPR vs. Channel Power Output IP3 vs. Output Power Output IP3 vs. Output Power 25 C, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW frequency = 900 / 910 MHz frequency = 1900 / 1910 MHz -35 40 40 freq = 1900 MHz -45 35 35 -55 30 30 25 25 -65 -40c +25c +85c -40c +25c +85c 20 20 -75 02 4 6 8 10 02 4 6 8 10 6 7 8 9 10 11 12 13 Output Channel Power (dBm) Output Power (dBm) Output Power (dBm) S-Parameters (V = +4.5 V, I = 78 mA, T = 25 C, calibrated to device leads) D D Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -4.72 -30.88 15.44 164.91 -21.66 30.26 -9.38 -40.39 250 -8.67 -27.48 13.93 165.39 -20.26 3.92 -16.70 -32.88 500 -8.96 -37.68 13.75 157.18 -20.14 -2.25 -17.56 -31.25 750 -9.06 -51.15 13.60 148.11 -20.02 -7.65 -18.25 -35.67 1000 -9.04 -66.87 13.47 137.91 -19.92 -10.63 -19.05 -43.62 1250 -9.00 -82.11 13.39 128.62 -19.85 -15.19 -20.28 -51.49 1500 -8.89 -97.31 13.13 118.57 -19.73 -18.74 -21.30 -61.37 1750 -8.74 -112.48 12.91 109.09 -19.56 -23.00 -22.57 -73.75 2000 -8.65 -128.51 12.68 99.48 -19.71 -28.33 -25.15 -85.19 2250 -8.40 -142.86 12.48 89.94 -19.53 -33.37 -27.03 -103.19 2500 -7.99 -157.26 12.22 80.41 -19.40 -37.91 -28.58 -135.19 2750 -7.93 -171.48 11.88 71.42 -19.33 -42.30 -28.56 -177.83 3000 -7.47 175.92 11.53 62.05 -19.58 -47.37 -28.48 153.84 Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 6 January 2008 NF (dB) Gain (dB) Gain (dB) S11 (dB) Output Power (dBm) Gain (dB) S22 (dB) ACPR (dBc) Output Power (dBm)

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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