AP512
UMTS-band 8W HBT Amplifier Module Product Information
Product Features Product Description Functional Diagram
The AP512 is a high dynamic range power amplifier in a
2110 2170 MHz
RoHS-compliant flange-mount package. The multi-stage
28.5 dB Gain
amplifier module has 28.5 dB gain, while being able to
achieve high performance for UMTS-band applications with
-55 dBc ACLR
@ 28 dBm W-CDMA linear power
+39 dBm of compressed 1dB power. The module has been
internally optimized for linearity to provide -55 dBc ALCR
+39 dBm P1dB
1 2 3 4 5 6
at 28 dBm power for W-CDMA applications.
+12 V Single Supply
Top View
The AP512 uses a high reliability InGaP/GaAs HBT process
Power Down Mode
Pin No. Function
technology and does not require any external matching
Bias Current Adjustable
1 RF Output
components. The module operates off of a +12V supply and
2 / 4 Vcc
does not requiring any negative biasing voltages; an internal
RoHS-complaint flange-mount pkg
3 / 5 Vpd
active bias allows the amplifier to maintain high linearity
6 RF Input
over temperature. It has the added feature of a +5V power
Case Ground
down control pin. A low-cost metal housing allows the
Applications
device to have a low thermal resistance and achieves over
Final stage amplifiers for Repeaters 100 years MTTF. All devices are 100% RF and DC tested.
Optimized for driver amplifier PA
The AP512 is targeted for use as a driver or final stage
mobile infrastructure
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G base
stations or repeaters using the UMTS frequency band.
(1)
Specifications
Parameter Units Min Typ Max Test Conditions
Operational Bandwidth MHz 2110 2170
Test Frequency MHz 2140
Adjacent Channel Leakage Ratio dBc -55 -50 W-CDMA +28 dBm Total Power, 5 MHz offset
Power Gain dB 26 28.5 31 Pout = +28 dBm
Input Return Loss dB 14
Output Return Loss dB 6
Output P1dB dBm +39
Output IP3 dBm +53 Pout = +28 dBm/tone, f = 1 MHz
(2)
Operating Current A 1.72 Pout = +28 dBm
(2)
Quiescent Current, Icq A 1.55 1.69 1.80
Device Voltage, Vcc V +12
(3)
Device Voltage, Vpd V +5 Pull-down voltage: 0V = OFF, 5V=ON
Ruggedness VSWR 10:1 Pout = +39 dBm CW, all phases
1. Test conditions unless otherwise noted: 25C.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Ordering Information
Parameter Rating
Operating Case Temperature -40 to +85 C
Part No. Description
Storage Temperature -55 to +150 C
AP512 UMTS-band 8W HBT Amplifier Module
RF Input Power (continuous)
+10 dBm
WCDMA signal (3GPP Test Model 1+ 32 DPCH) AP512-PCB Fully-Assembled Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 5 June 2006
AP512
UMTS-band 8W HBT Amplifier Module Product Information
Class AB Configuration (AP512-PCB)
The AP512-PCB and AP512 module is configured for Class AB by default. The resistor R7 which sets the current draw for
the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
DNP 10F
0
0
DNP 100pF DNP .01F
.01F 100pF
DNP DNP
Notes:
1. Please note that for reliable operation, the evaluation board and
RF IN RF OUT mounting plate will have to be attached to a much larger heat sink
during operation and in laboratory environments to dissipate the
power consumed by the device. The use of a convection fan is also
0
0 recommended in laboratory environments. Details of the mounting holes
used in the WJ mounting plate are given on the last page of this datasheet.
DNP DNP
DNP
DNP
6 5 4 3 12
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
1. Connect RF In and Out
2. Connect the voltages and ground pins as shown in the circuit.
3. Apply the RF signal
4. Power down with the reverse sequence
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 5 June 2006
+12V
+5V
GND
+12V