AP512 Qorvo

AP512 UMTS-band 8W HBT Amplifier Module Product Information Product Features Product Description Functional Diagram The AP512 is a high dynamic range power amplifier in a 2110 2170 MHz RoHS-compliant flange-mount package. The multi-stage 28.5 dB Gain amplifier module has 28.5 dB gain, while being able to achieve high performance for UMTS-band applications with -55 dBc ACLR @ 28 dBm W-CDMA linear power +39 dBm of compressed 1dB power. The module has been internally optimized for linearity to provide -55 dBc ALCR +39 dBm P1dB 1 2 3 4 5 6 at 28 dBm power for W-CDMA applications. +12 V Single Supply Top View The AP512 uses a high reliability InGaP/GaAs HBT process Power Down Mode Pin No. Function technology and does not require any external matching Bias Current Adjustable 1 RF Output components. The module operates off of a +12V supply and 2 / 4 Vcc does not requiring any negative biasing voltages; an internal RoHS-complaint flange-mount pkg 3 / 5 Vpd active bias allows the amplifier to maintain high linearity 6 RF Input over temperature. It has the added feature of a +5V power Case Ground down control pin. A low-cost metal housing allows the Applications device to have a low thermal resistance and achieves over Final stage amplifiers for Repeaters 100 years MTTF. All devices are 100% RF and DC tested. Optimized for driver amplifier PA The AP512 is targeted for use as a driver or final stage mobile infrastructure amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations or repeaters using the UMTS frequency band. (1) Specifications Parameter Units Min Typ Max Test Conditions Operational Bandwidth MHz 2110 2170 Test Frequency MHz 2140 Adjacent Channel Leakage Ratio dBc -55 -50 W-CDMA +28 dBm Total Power, 5 MHz offset Power Gain dB 26 28.5 31 Pout = +28 dBm Input Return Loss dB 14 Output Return Loss dB 6 Output P1dB dBm +39 Output IP3 dBm +53 Pout = +28 dBm/tone, f = 1 MHz (2) Operating Current A 1.72 Pout = +28 dBm (2) Quiescent Current, Icq A 1.55 1.69 1.80 Device Voltage, Vcc V +12 (3) Device Voltage, Vpd V +5 Pull-down voltage: 0V = OFF, 5V=ON Ruggedness VSWR 10:1 Pout = +39 dBm CW, all phases 1. Test conditions unless otherwise noted: 25C. 2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3). Absolute Maximum Rating Ordering Information Parameter Rating Operating Case Temperature -40 to +85 C Part No. Description Storage Temperature -55 to +150 C AP512 UMTS-band 8W HBT Amplifier Module RF Input Power (continuous) +10 dBm WCDMA signal (3GPP Test Model 1+ 32 DPCH) AP512-PCB Fully-Assembled Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 5 June 2006 AP512 UMTS-band 8W HBT Amplifier Module Product Information Class AB Configuration (AP512-PCB) The AP512-PCB and AP512 module is configured for Class AB by default. The resistor R7 which sets the current draw for the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. DNP 10F 0 0 DNP 100pF DNP .01F .01F 100pF DNP DNP Notes: 1. Please note that for reliable operation, the evaluation board and RF IN RF OUT mounting plate will have to be attached to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also 0 0 recommended in laboratory environments. Details of the mounting holes used in the WJ mounting plate are given on the last page of this datasheet. DNP DNP DNP DNP 6 5 4 3 12 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: 1. Connect RF In and Out 2. Connect the voltages and ground pins as shown in the circuit. 3. Apply the RF signal 4. Power down with the reverse sequence Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 5 June 2006 +12V +5V GND +12V