X-On Electronics has gained recognition as a prominent supplier of MMG30301BT1 rf amplifier across the USA, India, Europe, Australia, and various other global locations. MMG30301BT1 rf amplifier are a product manufactured by NXP. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

MMG30301BT1 NXP

MMG30301BT1 electronic component of NXP
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Part No.MMG30301BT1
Manufacturer: NXP
Category:RF Amplifier
Description: RF Amplifier HBT GPA/LNA, 450-4000 MHz, 30 dB, 17 dBm
Datasheet: MMG30301BT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.584 ea
Line Total: USD 10.58

Availability - 972
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
947 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 7.682
10 : USD 7.061
25 : USD 6.739
100 : USD 6.0145
250 : USD 5.75
500 : USD 5.3015
1000 : USD 4.807
2000 : USD 4.807
5000 : USD 4.6575

     
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We are delighted to provide the MMG30301BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG30301BT1 and other electronic components in the RF Amplifier category and beyond.

DocumentNumber:MMG30301B NXPSemiconductors Rev. 0, 10/2016 Technical Data DriverorPre--driverAmplifier MMG30301BT1 forDohertyPowerAmplifiers TheMMG30301Bis a1W highgainamplifier designedas adriver or pre--driver forDoherty power amplifiers in wireless infrastructure equipment operating in the900to4300MHz frequency range. Becauseof its versatiledesign,the 9004300MHz,16.2dB 2140MHz device may also be used in a variety of general purpose amplifier applications, 30.1dBm including those at frequencies from 900 to 4300 MHz. BTSDRIVERAMPLIFIER Features P1dB: 30.1 dBm 2140 MHz Gain: 16.2 dB 2140 MHz Designed as a Doherty PA driver or pre--driver 5 V single supply, 258 mA current SOT--89 SOT--89 package 50 ohm operation with minimal external matching (1) Table1.LoadPullPerformance Characteristic Symbol 900MHz 1900MHz 2140MHz 2600MHz 3350MHz Unit Maximum Available Gain MAG 24.1 17.9 16.9 15.2 13.3 dB (2) (2) P 1dB Compression P1dB 30.0 30.0 30.1 30.4 30.1 dBm out Table2.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I 480 mA CC RFInput Power P 23 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 17 C/W JC Case Temperature 91C, 5 Vdc, 280 mA, no RFapplied 1. V =5Vdc,T =25 C, CW. CC A 2. Maximum allowable current not to exceed 480 mA. 3. Referto AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Goto Table4.ElectricalCharacteristics (V =5 Vdc, 2140 MHz, T =25 C, 50 ohm system, in NXP Application Circuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 15.8 16.2 dB p PowerOutput 1dB Compression P1dB 30.1 dBm Input Return Loss (S11) IRL 11.8 dB Output Return Loss (S22) ORL 13.8 dB Noise Figure NF 3.7 dB Supply Current I 240 258 280 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription Pin Number PinFunction 2 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B Charge Device Model(perJESD 22--C101) C3 Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C Table8.OrderingInformation Device TapeandReelInformation Package MMG30301BT1 T1 Suffix =1,000 Units, 12 mm Tape Width, 7--inch Reel SOT--89 MMG30301BT1 RF DeviceData NXP Semiconductors 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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