DocumentNumber:MMG3014NT1 FreescaleSemiconductor Rev. 5, 3/2016 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3014NT1 BroadbandHighLinearity Amplifier TheMMG3014NT1isageneralpurposeamplifierthatisinputandoutput internallyprematched.ItisdesignedforabroadrangeofClassA, small--signal, high linearity, general purpose applications. It is suitable for 40--4000MHz, 19.5dB applications with frequencies from 40 to 4000 MHz suchas cellular, PCS, 25dBm BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. InGaPHBTGPA Features Frequency: 40--4000 MHz P1dB: 25dBm 900MHz Small--Signal Gain: 19.5 dB 900 MHz ThirdOrder Output Intercept Point: 40.5dBm 900MHz Single 5 V Supply ActiveBias Cost--effectiveSOT--89SurfaceMount Plastic Package SOT--89 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V CC Small--SignalGain G 19.5 15 10 dB p Supply Current I 300 mA CC (S21) RFInput Power P 25 dBm in Input Return Loss IRL --25 --12 --8 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --11 --13 --19 dB J (S22) PowerOutput 1dB P1dB 25 25.8 25 dBm Compression Third OrderOutput OIP3 40.5 40.5 40 dBm Intercept Point 1. V =5Vdc,T =25 C, 50ohm system, applicationcircuit CC A tuned forspecified frequency. Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 27.4 C/W JC Case Temperature 81C, 5 Vdc, 135 mA, no RFapplied 2. Referto AN1955,Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4. Electrical Characteristics (V =5Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 18.5 19.5 dB p Input Return Loss (S11) IRL --25 dB Output Return Loss (S22) ORL --11 dB PowerOutput 1dB Compression P1dB 25 dBm Third OrderOutput Intercept Point OIP3 40.5 dBm Noise Figure NF 5.7 dB Supply Current I 110 135 160 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription Pin 2 Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestConditions/TestMethodology Class Human Body Model(perJESD22--A114) 1B Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3014NT1 RF DeviceData Freescale Semiconductor, Inc. 2