X-On Electronics has gained recognition as a prominent supplier of MMG3006NT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMG3006NT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMG3006NT1 NXP

MMG3006NT1 electronic component of NXP
MMG3006NT1 NXP
MMG3006NT1 RF Amplifier
MMG3006NT1  Semiconductors

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See Product Specifications
Part No. MMG3006NT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amp Chip Single GP 2.4GHz 6V 16-Pin QFN EP T/R
Datasheet: MMG3006NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.0183 ea
Line Total: USD 9.02 
Availability - 616
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
616
Ship by Fri. 11 Apr to Tue. 15 Apr
MOQ : 1
Multiples : 1
1 : USD 9.0183
10 : USD 7.3837
25 : USD 7.0007
100 : USD 6.5645
250 : USD 6.3091
500 : USD 6.0644
1000 : USD 5.5431
2000 : USD 5.4899
5000 : USD 5.4899

   
Manufacturer
Product Category
RoHS - XON
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Type
Operating Frequency
Gain
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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Supply Voltage - Max
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We are delighted to provide the MMG3006NT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG3006NT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMG3006NT1 NXPSemiconductors Rev. 6, 12/2017 TechnicalData HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3006NT1 BroadbandHighLinearity Amplifier The MMG3006NT1 is a general purposeamplifier that is internally input prematchedanddesignedforabroadrangeofClassA,small--signal,high linearity, general purpose applications. It is suitable for applications with 400--2400MHz,17.5dB frequenciesfrom400to2400MHzsuchascellular,PCS,WLL,PHS, 33dBm VHF, UHF, UMTS andgeneralsmall--signalRF. InGaPHBTGPA Features Frequency: 400--2400MHz P1dB: 33dBm 900MHz Small--signalgain: 17.5dB 900MHz Thirdorder output intercept point: 49dBm 900MHz Single5V supply QFN4 4--16L Internally input prematchedto50ohms (1) Table1.TypicalPerformance Table2.MaximumRatings 900 1960 2140 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DC Small--SignalGain G 17.5 14 14 dB p Supply Current I 1400 mA DC (S21) RFInputPower P 28 dBm in InputReturnLoss IRL --8 --9 --12 dB StorageTemperatureRange T --65to+150 C (S11) stg JunctionTemperature T 175 C OutputReturnLoss ORL --13 --14 --18 dB J (S22) PowerOutput 1dB P1db 33 33 33 dBm Compression ThirdOrderOutput OIP3 49 49 49 dBm InterceptPoint 1. V =5Vdc,T =25 C,50ohmsystem,applicationcircuit DC A tunedforspecifiedfrequency. Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 7.8 C/W JC CaseTemperature89C,5Vdc,850mA,noRFapplied 2. RefertoAN1955,Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4.ElectricalCharacteristics (V =5Vdc,900MHz,T =25 C,50ohmsystem,inNXP ApplicationCircuit) DC A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 16.5 17.5 dB p InputReturnLoss (S11) IRL --8 dB OutputReturnLoss (S22) ORL --13 dB PowerOutput 1dB Compression P1dB 33 dBm ThirdOrderOutputInterceptPoint OIP3 49 dBm NoiseFigure NF 6.6 dB Supply Current I 760 850 960 mA DC Supply Voltage V 5 V DC Table5.FunctionalPinDescription Pin V N.C.N.C. N.C. CC Name Number Description 16 15 14 13 V 1 Bias voltagesupply. BA V 1 12 RF /V out CC BA RF 2,3,4 RFinputforthepoweramplifier.This pinis DC--coupledand in RF 2 11 RF /V requires aDC--blockingseries capacitor. in out CC 3 10 RF /V RF out CC RF / 9,10, RFoutputforthepoweramplifier.This pinis DC--coupled in out V 11, 12 andrequires aDC--blockingseries capacitor. 4 9 RF /V CC RF out CC in V 16 Collectorvoltagesupply. 5 6 7 8 CC N.C.N.C.N.C. N.C. GND Backside ThecentermetalbaseoftheQFNpackageprovides both Center DCandRFgroundas wellas heatsink contactforthe (TopView) Metal poweramplifier. Figure1.PinConnections Table6.ESD ProtectionCharacteristics TestConditions/TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table8.OrderingInformation Device TapeandReelInformation Package MMG3006NT1 T1Suffix =1,000Units,12mm TapeWidth,13--inchReel QFN4 4--16L MMG3006NT1 RF DeviceData NXP Semiconductors 2

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Freescale Semiconductor
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NXP / Freescale
NXP SEMI
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NXP Semiconductors
NXP USA Inc.
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