DocumentNumber:MML09212H NXPSemiconductors Rev. 3, 01/2018 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MML09212HT1 Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed forarangeoflownoise,highlinearityapplicationssuchaspicocell, 400--1400MHz,37.5dB,22.8dBm femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It E--pHEMTLNA operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE. Features Low noise figure: 0.52 dB 900 MHz Frequency: 400--1400 MHz Unconditionally stable over temperature QFN3 312L High reverse isolation: --58 dB 900 MHz P1dB: 22.8 dBm 900 MHz Small--signal gain: 37.5 dB 900 MHz Third order output intercept point: 37.5 dBm 900 MHz Active bias control (on--chip) Single 5 V supply Supply current: 150 mA 50 ohm operation (some external matching required) Cost--effective 12--pin, 3 mm QFN surface mount plastic package (1) Table1.TypicalPerformance Table2.MaximumRatings 400 900 1400 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DD (2) Noise Figure NF 0.52 0.52 0.74 dB Supply Current I 300 mA DD Input Return Loss IRL --19 --24 --17 dB RF Input Power P 20 dBm in (S11) Storage Temperature Range T --65 to +150 C stg Output Return Loss ORL --15 --14 --13.5 dB (S22) Junction Temperature T 175 C J Small--SignalGain G 40.0 37.5 35.0 dB p (S21) PowerOutput P1dB 22.6 22.8 22.5 dBm 1dB Compression Third Order Input IIP3 --2 --0.5 3 dBm Intercept Point Third Order Output OIP3 37 37 38 dBm Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned forspecified frequency. 2. Noise figure value calculated with connector losses removed. Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 37 C/W JC Case Temperature 83C, 5 Vdc, 150 mA, no RF applied 3. Referto AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in NXP Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 35.0 37.5 dB p Input Return Loss (S11) IRL --24 dB Output Return Loss (S22) ORL --14 dB PowerOutput 1dB Compression P1dB 22.8 dBm Third Order Input Intercept Point IIP3 --0.5 dBm Third Order Output Intercept Point OIP3 37 dBm Reverse Isolation (S12) S12 --58 dBm (1) Noise Figure NF 0.52 dB (2) Supply Current I 128 150 178 mA DD Supply Voltage V 5 V DD Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 0 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table7.OrderingInformation Device TapeandReelInformation Package MML09212HT1 T1 Suffix =1,000 Units, 12 mm Tape Width, 7--inch Reel QFN3 3--12L 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signalapplied. RF Feedback V DD1 RF FB N.C. V DD1 12 11 10 RF MATCH RF19 N.C. MATCH RF 28 V /RF in GND DD2 out RF V /RF in DD2 out RF37 N.C. in 45 6 RF in BIAS BIAS V N.C. V BA1 BA2 CIRCUIT CIRCUIT Note:Exposedbacksideofthepackageis DCandRF ground. V V BA1 BA2 Figure1.FunctionalBlockDiagram Figure2.PinConnections MML09212HT1 RF DeviceData NXP Semiconductors 2