DocumentNumber:MML09231H FreescaleSemiconductor Rev. 1, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MML09231HT1 Low Noise Amplifier TheMML09231Hisasingle--stagelownoiseamplifier(LNA)withactive biasandhighisolationforuseincellularinfrastructureapplications.Itis 700--1400MHz,17.2dB designed for a range of low noise, high linearity applications such as small 24.5dBm,0.36dBNF cell,towermountedamplifiers(TMA)andreceiverfront--endcircuits.It E--pHEMTLNA operatesfromasinglevoltagesupply andis suitableforapplicationswith frequencies from 700to1400MHz suchas ISM, GSM, W--CDMAandLTE. Features Ultra Low Noise Figure: 0.36 dB 900 MHz Frequency: 700--1400 MHz Unconditionally Stable Over Temperature DFN2 2 High Reverse Isolation: --21 dB 900 MHz P1dB: 24.5 dBm 900 MHz Small--Signal Gain: 17.2 dB 900 MHz (adjustable externally) Third Order Output Intercept Point: 37.4 dBm 900 MHz Single 5 V Supply Power--down Pin Supply Current: 55 mA 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 700 900 1400 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DD (2a) (b) (b) (b) Noise Figure NF 0.46 0.36 0.45 dB Supply Current I 150 mA DD Input Return Loss IRL --17 --15 --14 dB RF Input Power P 20 dBm in (S11) Storage Temperature Range T --65to+150 C stg Output Return Loss ORL --14 --15 --15 dB (S22) Junction Temperature T 175 C J Small--Signal Gain G 19 17.2 13.2 dB p (S21) Power Output P1dB 24 24.5 24 dBm 1dB Compression Third Order Input IIP3 17 20.2 23.8 dBm Intercept Point Third Order Output OIP3 36 37.4 37 dBm Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned for specified frequency. 2. (a) Noise figure value calculated with connector losses removed. (b) Z =50 . in Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 77 C/W JC Case Temperature 95C, 5 Vdc, 55 mA, no RF applied 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 15.8 17.2 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --15 dB Power Output 1dB Compression P1dB 24.5 dBm Third Order Input Intercept Point IIP3 20.2 dBm Third Order Output Intercept Point OIP3 37.4 dBm Reverse Isolation (S12) S12 --21 dB (1) Noise Figure NF 0.36 dB (2) Supply Current I 40 55 70 mA DD Supply Voltage V 5 V DD Supply Current in Power Down Mode I 1.1 mA PD (3) Logic Voltage for Power Down Input High Voltage V 2.2 V V PD DD Input Low Voltage 0 0.5 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signal applied. 3. Limits derived from device characterization. Table5.FunctionalPinDescription Pin Number PinFunction V18 PowerDown BIAS 1 V BIAS RF /V RF27 out DD in GND 2 RF in N.C.36 N.C. 3 No Connection N.C. 4 5 N.C. 4 No Connection (TopView) 5 No Connection Note:Exposedbacksideofthepackageis 6 No Connection DCandRF ground. 7 RF /Supply Voltage out Figure1.PinConnections 8 Power Down (active high) Table6.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD 22--A114) 1B, passes 700 V Machine Model(per EIA/JESD 22--A115) A Charge Device Model(per JESD 22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C MML09231HT1 RF Device Data Freescale Semiconductor, Inc. 2