DocumentNumber:MMG20271H9 FreescaleSemiconductor Rev. 1, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single--stage, low noiseamplifier MMIC, housed in a SOT--89 standard plastic package. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a 1500--2700MHz,16dB second--stageLNAinthereceivechain.Itisidealforcellular,PCS,LTE, 27.5dBm TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the E--pHEMTLNA/GPA 1500 to 2700 MHz frequency range. Features Frequency: 1500--2700 MHz Noise Figure: 1.7 dB 2140 MHz P1dB: 27.5 dBm 2140 MHz SOT--89 Small--Signal Gain: 16 dB 2140 MHz Third Order Output Intercept Point: 43.1 dBm 2140 MHz Class 2 HBM ESD Immunity Single 5 V Supply Supply Current: 215 mA 50 Ohm Operation (some external matching required) Cost--effective SOT--89 Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 1500 1900 2140 2700 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz MHz Unit Supply Voltage V 6 V DD Noise Figure NF 1.9 1.8 1.7 1.8 dB Supply Current I 400 mA DD Input Return IRL --11 --12.1 --13.5 --18.5 dB RF Input Power P 25 dBm in Loss (S11) Storage Temperature Range T --65 to +150 C stg Output Return ORL --24 --25.3 --35 --28 dB Junction Temperature T 175 C Loss (S22) J Small--Signal G 18 16.6 16 14.3 dB p Gain (S21) Power Output P1dB 27.5 27.5 27.5 27.6 dBm 1dB Compression Third Order IIP3 23 25.2 27.1 29.9 dBm Input Intercept Point Third Order OIP3 41 41.8 43.1 44.2 dBm Output Intercept Point 1. V =5Vdc,T =25 C,50ohmsystem,applicationcircuittuned DD A for specified frequency. Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 29 C/W JC Case Temperature 91C, 5 Vdc, 220 mA, no RF applied 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 2140 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 13.4 16 dB p Input Return Loss (S11) IRL --13.5 dB Output Return Loss (S22) ORL --35 dB Power Output 1dB Compression P1dB 27.5 dBm Third Order Input Intercept Point IIP3 27.1 dBm Third Order Output Intercept Point OIP3 43.1 dBm Reverse Isolation (S12) S12 --22 dB Noise Figure NF 1.7 dB Supply Current I 177 215 271 mA DD Supply Voltage V 5 V DD Table5.ESD ProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 2 Machine Model(per EIA/JESD22--A115) A Charge Device Model(per JESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table7.FunctionalPinDescription Pin 2 Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram MMG20271H9T1 RF Device Data Freescale Semiconductor, Inc. 2