DocumentNumber:MMG3002NT1 FreescaleSemiconductor Rev. 12, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3002NT1 BroadbandHighLinearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-- signal,highlinearity,generalpurposeapplications.Itissuitablefor applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. 40--3600MHz, 20dB Features 21dBm InGaPHBTGPA Frequency: 40--3600 MHz P1dB: 21dBm 900MHz Small--Signal Gain: 20 dB 900 MHz ThirdOrder Output Intercept Point: 37.5dBm 900MHz Single Voltage Supply Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. SOT--89 (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 20 18 14.5 dB p Supply Current I 400 mA CC (S21) RFInput Power P 12 dBm in Input Return Loss IRL --16 --26 --16 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --12 --8 --11 dB J (S22) PowerOutput P1dB 21 21 18.5 dBm 1dB Compression Third OrderOutput OIP3 37.5 36 32 dBm Intercept Point 1. V =5.2Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 46.5 C/W JC Case Temperature 118C, 5.2 Vdc, 110 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =5.2Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 19.3 20 dB p Input Return Loss (S11) IRL --16 dB Output Return Loss (S22) ORL --12 dB PowerOutput 1dB Compression P1dB 21 dBm Third OrderOutput Intercept Point OIP3 37.5 dBm Noise Figure NF 4.2 dB Supply Current I 95 110 125 mA CC Supply Voltage V 5.2 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestConditions/TestMethodology Class Human Body Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3002NT1 RF DeviceData Freescale Semiconductor, Inc. 2 NOTRECOMMENDEDFORNEWDESIGN NOTRECOMMENDEDFORNEWDESIGN