QS3VH862QG8 Renesas

IDTQS3VH862 2.5V / 3.3V 10-BIT ACTIVE HIGH AND LOW ENABLE, HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS IDTQS3VH862 2.5V / 3.3V 10-BIT HIGH AND LOW EN- ABLE, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: N channel FET switches with no parasitic diode to VCC The QS3VH862 HotSwitch with 10-bit active high and low enable is Isolation under power-off conditions a high bandwidth bus switch. The QS3VH862 has very low ON No DC path to VCC or GND resistance, resulting in under 250ps propagation delay through the 5V tolerant in OFF and ON state switch. The switches are controlled by independent active low enable 5V tolerant I/Os (BE) and active high enable (BE) controls. In the ON state, the switches Low RON - 4 typical can pass signals up to 5V. In the OFF state, the switches offer very high Flat RON characteristics over operating range impedence at the terminals. Rail-to-rail switching 0 - 5V The combination of near-zero propagation delay, high OFF imped- Bidirectional dataflow with near-zero delay: no added ground ance, and over-voltage tolerance makes the QS3VH862 ideal for high bounce performance communications applications. Excellent RON matching between channels The QS3VH862 is characterized for operation from -40C to +85C. VCC operation: 2.3V to 3.6V High bandwidth - up to 500MHz LVTTL-compatible control Inputs Undershoot Clamp Diodes on all switch and control Inputs Low I/O capacitance, 4pF typical Available in QSOP package APPLICATIONS: Hot-swapping 10/100 Base-T, Ethernet LAN switch Low distortion analog switch Replaces mechanical relay ATM 25/155 switching FUNCTIONAL BLOCK DIAGRAM A0 B0 A9 B9 BE BE The IDT logo is a registered trademark of Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE FEBRUARY 2014 1 c 2014 Integrated Device Technology, Inc. DSC-5859/13IDTQS3VH862 2.5V / 3.3V 10-BIT ACTIVE HIGH AND LOW ENABLE, HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE (1) ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Description Max Unit (2) VTERM SupplyVoltage to Ground 0.5 to +4.6 V (3) VTERM DC Switch Voltage VS 0.5 to +5.5 V BE 1 24 VCC (3) VTERM DC Input Voltage VIN 0.5 to +5.5 V A0 BE 2 23 VAC AC Input Voltage (pulse width 20ns) 3 V A1 3 22 B0 IOUT DC Output Current (max. sink current/pin) 120 mA TSTG Storage Temperature 65 to +150 C A2 4 21 B1 NOTES: A3 5 20 B2 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of A4 6 19 B3 the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating A5 7 18 B4 conditions for extended periods may affect reliability. 8 17 B5 A6 2. VCC terminals. 3. All terminals except VCC . A7 9 16 B6 A8 10 15 B7 A9 11 14 B8 CAPACITANCE (TA = +25C, F = 1MHz, VIN = 0V, VOUT = GND 12 13 B9 (1) 0V)Symbol Parameter Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF CI/O Quickswitch Channels (Switch ON) 8 12 pF QSOP TOP VIEW NOTE: 1. This parameter is guaranteed but not production tested. PIN DESCRIPTION Pin Names Description BE Active HIGH Bus Enable BE Active LOW Bus Enable A0 - A9 Bus A B0 - B9 Bus B (1) FUNCTION TABLE BE BE A0 - A9 Function L L Z Disconnect L H Z Disconnect HL B0 - B9 Connect H H Z Disconnect NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level Z = High-Impedence 2