QPA9426 High Linearity W Small Cell PA General Description The QPA9426 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits, suitable for small cell base station applications. QPA9426 provides 34 dB gain and +27 dBm linear power over the 2.5 2.7 GHz frequency range which includes 7x7mm Leadless SMT Package 3GPP bands 7, 38 & 41. The amplifier is able to achieve 47dBc ACLR at +27 dBm output power using 20 MHz LTE Product Features signal. 2.5 2.7 GHz Frequency Range The QPA9426 integrates two high performance amplifier stages onto a module to allow for a compact system design Fully Integrated, 2 Stage Power Amplifier and requires very few external components for operation. Internally Matched 50 Input/Output The amplifier is bias adjustable allowing the amplifiers 47dBc ACLR at Pavg = +27dBm power consumption to be optimized. The QPA9426 is 34dB Gain available in a lead-free/RoHS-compliant 7x7mm surface 14% PAE at +27 dBm mount package. 420mA Quiescent Current On-chip Bias Control and Temp. Comp. Circuit Applications Functional Block Diagram Small Cell/Picocell Bands 7, 38, 41 Vref GND 1 14 Enterprise Femtocell GND GND Customer Premises Equipment (CPE) 2 13 Data Cards and Terminals GND RF out 3 12 Distributed Antenna Systems (DAS) Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 11 4 RF in GND 10 5 GND GND 6 9 Backside Paddle RF/DC GND NC GND 7 8 Top View Ordering Information Part No. Description QPA9426SR 100pcs on 7 reel QPA9426TR13 2,500pcs on a 13 reel (standard) QPA9426PCB401 2.5 2.7 GHz Evaluation Board Data Sheet August 7, 2017 Subject to change without notice - 1 of 8 - www.qorvo.com QPA9426 High Linearity W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150 C V , V +3.6 +4.5 +5.25 V CC1 cc2 Supply Voltage (V ) +6 V V +2.75 +2.85 +2.95 V CC ref Vref +3.5 V TCASE 40 +85 C RF Input Power, CW, 50, T=25 C +10 dBm Tj at TCASE max +156 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 2.5 2.7 GHz Test Frequency 2.6 GHz Gain 30.5 35 dB 33 Input Return Loss 20 dB Output Return Loss 20 dB P1dB 35.5 dBm POUT = +27dBm, 20MHz LTE E-TM1.1, ACLR -45 47 dBc 9.5dB PAR POUT = +27dBm, 20MHz LTE E-TM1.1, Power Added Efficiency 12 14 % 9.5dB PAR 2 Quiescent Current, I V + V 330 500 mA CQ CC1 CC2 420 Leakage Current VCC = +4.5 V, Vref = 0 V 3 10 A Reference Current , I Vref = +2.85V 15 19 mA ref Operational Current, I Pout = +27dBm 805 900 mA CC Rise time (10%-90%) 650 ns Switching Speed Fall time (90%-10%) 500 ns Pout +27dBm, In & Out of band load Spurious Output Level -60 dBc VSWR 10:1 VSWR survivability No permanent degradation or failure 10:1 - 2F0 (Pout = 27 dBm) -32 -28 dBc 3F (Pout = 27 dBm) Harmonics 0 -34 -30 dBc 4F (Pout = 27 dBm) 0 -64 -60 dBc Module (junction to case) Thermal Resistance, jc 17.4 C/W Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 cc2 ref 2. Current through Vcc1 does not vary with power. Vcc1 provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. Data Sheet August 7, 2017 Subject to change without notice - 2 of 8 - www.qorvo.com