QPA2213 220 GHz 2 Watt GaN Amplifier Product Overview Qorvos QPA2213 is a packaged wide band driver amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 2.020.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power- added efficiency. The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. Key Features The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is Frequency Range: 220 GHz ideal for both commercial and military wide band or narrow P (P =18 dBm): 34 dBm SAT IN band systems. PAE (P =18 dBm): 23 % IN Power Gain (P =18 dBm): 16 dB IN Lead-free and RoHS compliant. Small Signal Gain: 25 dB Noise Figure: 4.0 dB Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm Package Dimensions: 4.50 x 4.50 x 1.74 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications RF IN RF OUT HPA Driver Amplifier Radar Systems Ordering Information Part No. Description 2 20 GHz 2 Watt GaN Amplifier QPA2213 Top View (10 Pcs.) QPA2213S2 Samples (2 pcs.) QPA2213EVBV01 Evaluation Board for QPA2213 Data Sheet Rev. E, June 5, 2020 Subject to change without notice 1 of 28 www.qorvo.com QPA2213 2 20 GHz 2 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 18 V Gate Voltage Range (VG) -4 V to 0 V Drain Current (IDQ) 330 mA Drain Current (ID) 890 mA Operating Temperature 40 to +85 C Electrical specifications are measured at specified test Gate Current (IG) See plot pg. 23 conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85 C 13.7 W recommended operating conditions. Input Power (P ), 50 , IN 27 dBm V =18 V, I =330 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, IN 27 dBm VD=18 V, IDQ=330 mA, 85 C Soldering Temperature 260 C Storage Temperature -55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. E, June 5, 2020 Subject to change without notice 2 of 28 www.qorvo.com