QPA2210D 2731 GHz 7 Watt GaN Power Amplifier Product Overview Qorvo s QPA2210D is a Ka-band power amplifier fabricated on Qorvo s 0.15 um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 2.5 W linear power with 25 dBc intermodulation distortion products and 25 dB small signal gain. Saturated output power is 7 W with power-added efficiency of 32%. QPA2210D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2210D is fully matched to 50 ohms with integrated DC blocking caps on Key Features both I/O ports. Frequency Range: 2731 GHz The QPA2210D is 100% DC and RF tested on-wafer to P (P =21 dBm): > 38.4 dBm SAT IN ensure compliance to electrical specifications. PAE (P =21 dBm): > 32 % IN Lead-free and RoHS compliant. Power Gain (PIN=21 dBm): > 16 dB IMD3 (at 31 dBm/tone): < 25 dBc Small Signal Gain: 25 dB Bias: V = 20 V, I = 200 mA D DQ Die Dimensions: 2.740 x 1.432 x 0.050 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications VG12 VG3 VD12 VD3 5G Infrastructure Satellite Communications RF IN RF OUT Ordering Information VG12 VG3 VD12 VD3 Part No. Description 2731 GHz 7 Watt GaN Amplifier QPA2210D (10 Pcs.) QPA2210DEVB01 Evaluation Board for QPA2210D Data Sheet Rev. C, January 2021 Subject to change without notice 1 of 22 www.qorvo.com QPA2210D 27 31 GHz 7 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 20 V Gate Voltage Range (V ) 5 V to 0 V Drain Current (I ) 200 mA G DQ Drain Current (ID) 2800 mA Operating Temperature 40 to +85 C Gate Current (IG) See plot pg. 17 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Power Dissipation (P ), 85 C 20 W DISS recommended operating conditions. Input Power (P ), 50 , IN 33 dBm V =20 V, I =200 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, IN 33 dBm VD=20 V, IDQ=200 mA, 85 C Soldering Temperature (30 s, max.) 320 C Storage Temperature 55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 27 31 GHz 27 GHz 38.8 dBm Output Power (P =21 dBm) 29 GHz 39.0 dBm IN 31 GHz 38.8 dBm 27 GHz 34.7 % Power Added Efficiency (P =21 dBm) 29 GHz 33.7 % IN 31 GHz 33.9 % 27 GHz 27.0 dB Small Signal Gain 29 GHz 27.3 dB 31 GHz 26.0 dB 27 GHz 20 dB Input Return Loss 29 GHz 11 dB 31 GHz 14 dB 27 GHz 7 dB Output Return Loss 29 GHz 9 dB 31 GHz 8 dB 27 GHz 34 dBc IMD3 (POUT/Tone=31 dBm, 10 MHz tone 29 GHz 29 dBc spacing) 31 GHz 29 dBc POUT Temp. Coeff. (85C to25 C, PIN = 21 dBm)) 0.020 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.094 dB/C Test conditions, unless otherwise noted: T = +25 C, V = 20 V, I = 200 mA D DQ Data Sheet Rev. C, January 2021 Subject to change without notice 2 of 22 www.qorvo.com