TGA2214-CP 218GHz 4W GaN Power Amplifier Product Description Qorvos TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvos QGaN15 0.15m GaN on SiC process. Operating from 2 to 18GHz, the TGA2214- CP generates > 4W saturated output power with a power- added efficiency of > 15%, and > 14dB large signal gain across the entire operational band. The TGA2214-CP is offered in a 10-lead 15 x 15mm bolt- down package. The package has a pure Cu base, offering superior thermal management. The TGA2214-CP is ideally Product Features suited to support, both in the commercial and the defense arenas, applications requiring either wideband or multi- Frequency Range: 218GHz band frequency performance. P : > 36dBm at P = 23dBm OUT IN PAE: > 15% CW at PIN = 23dBm Both RF ports have integrated DC blocking capacitors and are fully matched to 50Ohms. Small Signal Gain: > 22dB IM3: < 17dBc at 30dBm POUT/Tone Bias: V = +22V, I = 600mA, V = 2.3V Typical D DQ G Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Functional Block Diagram Applications Test Equipment Electronic Warfare 1 10 Military and Commercial Radar 2 9 3 8 4 7 5 6 Ordering Information Part No. Description TGA2214-CP 218GHz 4W GaN Power Amplifier 1119150 TGA2214-CP Evaluation Board - 1 of 13 - Data Sheet Rev. E, March 1, 2019 www.qorvo.com TGA2214-CP 218GHz 4W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ. Max Units Drain Voltage (V ) +29.5V D Drain Voltage (V ) +22 V D Gate Voltage Range (V ) 5 to 0V G Drain Current, (I ) 600 mA DQ Drain Current (I ) D st Drain Current, RF (I ) See chart page 6 mA D Drive 1 stage 0.5A nd 2 stage 1.0A Gate Voltage Range (V ) 2 to -2.9 V G Forward Gate Current (IG) See page 8 Gate Current, RF (I ) See chart page 6 mA G Drive Power Dissipation (PDISS), 85C 31W T Range 40 +85 C BASE Input Power, CW, 50, (PIN) 31dBm Electrical specifications are measured at specified test Input Power, CW, VSWR 3:1, 31dBm conditions. Specifications are not guaranteed over all VD = +30V, 85C, (PIN) recommended operating conditions. Channel Temperature (TCH) 275C Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 18 GHz Small Signal Gain > 22 dB Input Return Loss > 8 dB Output Return Loss > 11 dB Output Power at PIN = 23dBm > 36 dBm Power Added Efficiency at P = 23dBm > 15 % IN IM3 (POUT/Tone = 30dBm/Tone) < 17 dBc IM5 (POUT/Tone = 30dBm/Tone) < 29 dBc Small Signal Gain Temperature Coefficient -0.04 dB/C Output Power Temperature Coefficient (25 to 0.005 dBm/C 85C) Recommended Operating Voltage +22 +22 V Test conditions unless otherwise noted: 25C, V = +22V, I = 600mA, V = 2.3V Typ, CW. D DQ G - 2 of 13 - Data Sheet Rev. E, March 1, 2019 www.qorvo.com