X-On Electronics has gained recognition as a prominent supplier of RFPD9950 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RFPD9950 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RFPD9950 Qorvo

RFPD9950 electronic component of Qorvo
Images are for reference only
See Product Specifications
Part No.RFPD9950
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 1GHz GaAs/GaN Gain 25dB
Datasheet: RFPD9950 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 75.474
25 : USD 56.3002
100 : USD 49.5277
250 : USD 42.8279
500 : USD 36.2734
1000 : USD 31.9482
2500 : USD 31.185
5000 : USD 29.9856
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Test Frequency
Brand
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the RFPD9950 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFPD9950 and other electronic components in the RF Amplifier category and beyond.

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RFPD9950 1GHZ, 25DB GAIN GAAS/GAN POWER DOUBLER HYBRID Package: SOT-115J Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Suitable for PAL D and Flat NTSC Loading Unconditionally Stable Under all Terminations Functional Block Diagram High Output Capability 420mA typ. at 24VDC Product Description Applications The RFPD9950 is a Hybrid Power Doubler amplifier module. RFPD9950 has the best power 40MHz to 1003MHz CATV Amplifier consumption performance in its class. The part employs GaAs MESFET die, GaAs pHEMT die System and, GaN HEMT die. RFPD9950 is designed to operate from 40MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise. The product is packaged in SOT-115J and uses the latest GaN technology for the output stage. Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS RF MEMS InGaP HBT SiGe HBT Si BJT LDMOS TM TM TM TM RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity , PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the properly of their respective owners. 2009, RF Micro Devices, Inc. DS 130627 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 1 of 4 Support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com RFPD9950 1GHZ, 25DB GAIN GAAS/GAN POWER DOUBLER HYBRID Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone on evaluation board) 70 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 C Operating Mounting Base Temperature -30 to +100 C Specification Parameter Unit Condition Min. Typ. Max. V+= 24V TMB=30C ZS=ZL=75 Overall Power Gain 23.3 dB f=50MHz 24.7 f=870MHz 24.0 25.0 26.0 dB f=1003MHz 1 Slope 0.5 2.0 dB f=40MHz to 1003MHz Flatness of Frequency Response 0.8 dB f=40MHz to 1003MHz Input Return Loss -20 dB f=40MHz to 320MHz -18 dB f=320MHz to 640MHz -17 dB f=640MHz to 870MHz -16 dB f=870MHz to 1003MHz Output Return Loss -20 dB f=40MHz to 320MHz -18 dB f=320MHz to 640MHz -17 dB f=640MHz to 870MHz -16 dB f=870MHz to 1003MHz Noise Figure 5.0 5.5 dB f=50MHz to 1003MHz Total Current Consumption (DC) 420.0 450.0 mA V+= 24V TMB=30C ZS=ZL=75, PAL D Raster Distortion 4 2 CTB -66 -62 dBc VO=48dBmV at 862MHz, flat, 98 analog channels 5 2 XMOD -68 dBc V =48dBmV at 862MHz, flat, 98 analog channels O 6 2 CSO -65 -62 dBc VO=48dBmV at 862MHz, flat, 98 analog channels V+= 24V TMB=30C ZS=ZL=75, NTSC Raster Distortion V =56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 O 4 CTB -75 dBc 3 analog channels plus 75 digital channels (-6dB offset) VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 5 XMOD -70 dBc 3 analog channels plus 75 digital channels (-6dB offset) VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 6 CSO -79 dBc 3 analog channels plus 75 digital channels (-6dB offset) VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 7 CIN 66 dB 3 analog channels plus 75 digital channels (-6dB offset) 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 98 analog channels, PAL D raster: 47.25MHz to 862.25MHz, 48dBmV flat output level 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 4. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. 5. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. 6. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. 7. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). TM TM TM TM RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity , PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the properly of their respective owners. 2009, RF Micro Devices, Inc. DS 130627 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 4 Support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc

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