X-On Electronics has gained recognition as a prominent supplier of TGS2353-2 RF Switch ICs across the USA, India, Europe, Australia, and various other global locations. TGS2353-2 RF Switch ICs are a product manufactured by Qorvo. We provide cost-effective solutions for RF Switch ICs, ensuring timely deliveries around the world.

TGS2353-2 Qorvo

TGS2353-2 electronic component of Qorvo
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Part No.TGS2353-2
Manufacturer: Qorvo
Category: RF Switch ICs
Description: RF Switch ICs DC-18GHz SPDT IL <1.5dB GaN
Datasheet: TGS2353-2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 135.1329 ea
Line Total: USD 6756.64 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 50
Multiples : 50
50 : USD 135.1329
100 : USD 106.3601
250 : USD 101.0079

   
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We are delighted to provide the TGS2353-2 from our RF Switch ICs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGS2353-2 and other electronic components in the RF Switch ICs category and beyond.

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TGS2353-2 0.5 18.0 GHz High Power SPDT Switch GaN Switch Product Description Qorvos TGS2353-2 is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 18 GHz, the TGS2353-2 typically provides up to 10W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.5 dB or less, and high isolation of 30 dB typical. The TGS2353-2 performance allows it to be used in a variety of applications across commercial and military markets, low and high power. Product Features SPDT, Reflective Frequency Range: 0.5 - 18 GHz Power Handling: up to 10 W Insertion Loss: < 1.5 dB Isolation: 30 dB typical Control Voltages: 0 V/-40 V (from either side of the MMIC) Switching Speed: < 35 ns Die Dimensions: 1.12 mm x 1.62 mm x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Block Diagram Applications Commercial and Military Radar Communications 2, 7 4 J2 Vc2 Electronic Warfare RF Out1 Test Instruments 1 J1 General Purpose RF In 3, 6 5 Vc1 J3 RF Out2 Ordering Information Part No. Description TGS2353-2 0.5 - 18 GHz High Power Switch TGS2353-2 EVB Evaluation Board - 1 of 8 - Data Sheet Rev. C Sept. 30, 2021 www.qorvo.com TGS2353-2 0.5 18.0 GHz High Power SPDT Switch GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Min Typ. Max Units Control Voltage (VC) -50 V Frequency 0.5 18 GHz Control Current (I ) -1.5 to 6.0 mA Input Power Handling C 41 dBm (CW) Power Dissipation, (PDISS), CW 3.5 W Control Voltage -40 V RF Input Power, CW, 50 , T = 25C 41 dBm Temperature Range -40 25 +85 C Mounting Temperature (30 sec) 320 C Electrical specifications are measured at specified test Storage Temperature -55 to 150 C conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: TBASE = 25 C, VC1 = -40/0 V, VC2 = 0/-40 V, CW Input Power, see Function Table on page 4 Parameter Conditions Min Typical Max Units Operational Frequency Range 0.5 18 GHz Insertion Loss On-State < 1.5 dB Input Return Loss Common Port RL On-State 15 dB Output Return Loss Switched Port RL On-State 15 dB Isolation Off-State 30 dB Output Return Loss Isolated Port RL Off-State 2.5 dB Input Power 40 dBm Switching Speed ON 31 nS Switching Speed OFF 18 nS Insertion Loss Temperature Coefficient 0.003 dB/ C Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) T = 85C, V = 0 V, V = -40 V, freq. = 14 GHz 19.78 C/W JC BASE C1 C2 (1,2) PIN = 10 W, PDISS = 3.7 W Channel Temperature (TCH) 158 C 1. MMIC soldered to 40 mil thick Cu-Mo carrier plate using AuSn solder. Thermal resistance is determined from the channel to the back of the carrier plate (fixed 85 C temp.). 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 8 - Data Sheet Rev. C Sept. 30, 2021 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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