TGS2353-2 0.5 18.0 GHz High Power SPDT Switch GaN Switch Product Description Qorvos TGS2353-2 is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 18 GHz, the TGS2353-2 typically provides up to 10W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.5 dB or less, and high isolation of 30 dB typical. The TGS2353-2 performance allows it to be used in a variety of applications across commercial and military markets, low and high power. Product Features SPDT, Reflective Frequency Range: 0.5 - 18 GHz Power Handling: up to 10 W Insertion Loss: < 1.5 dB Isolation: 30 dB typical Control Voltages: 0 V/-40 V (from either side of the MMIC) Switching Speed: < 35 ns Die Dimensions: 1.12 mm x 1.62 mm x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Block Diagram Applications Commercial and Military Radar Communications 2, 7 4 J2 Vc2 Electronic Warfare RF Out1 Test Instruments 1 J1 General Purpose RF In 3, 6 5 Vc1 J3 RF Out2 Ordering Information Part No. Description TGS2353-2 0.5 - 18 GHz High Power Switch TGS2353-2 EVB Evaluation Board - 1 of 8 - Data Sheet Rev. C Sept. 30, 2021 www.qorvo.com TGS2353-2 0.5 18.0 GHz High Power SPDT Switch GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Min Typ. Max Units Control Voltage (VC) -50 V Frequency 0.5 18 GHz Control Current (I ) -1.5 to 6.0 mA Input Power Handling C 41 dBm (CW) Power Dissipation, (PDISS), CW 3.5 W Control Voltage -40 V RF Input Power, CW, 50 , T = 25C 41 dBm Temperature Range -40 25 +85 C Mounting Temperature (30 sec) 320 C Electrical specifications are measured at specified test Storage Temperature -55 to 150 C conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: TBASE = 25 C, VC1 = -40/0 V, VC2 = 0/-40 V, CW Input Power, see Function Table on page 4 Parameter Conditions Min Typical Max Units Operational Frequency Range 0.5 18 GHz Insertion Loss On-State < 1.5 dB Input Return Loss Common Port RL On-State 15 dB Output Return Loss Switched Port RL On-State 15 dB Isolation Off-State 30 dB Output Return Loss Isolated Port RL Off-State 2.5 dB Input Power 40 dBm Switching Speed ON 31 nS Switching Speed OFF 18 nS Insertion Loss Temperature Coefficient 0.003 dB/ C Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) T = 85C, V = 0 V, V = -40 V, freq. = 14 GHz 19.78 C/W JC BASE C1 C2 (1,2) PIN = 10 W, PDISS = 3.7 W Channel Temperature (TCH) 158 C 1. MMIC soldered to 40 mil thick Cu-Mo carrier plate using AuSn solder. Thermal resistance is determined from the channel to the back of the carrier plate (fixed 85 C temp.). 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 8 - Data Sheet Rev. C Sept. 30, 2021 www.qorvo.com