TGA4516-TS Qorvo

Ka-Band 2W Power Amplifier TGA4516-TS Key Features 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: 2.921 x 2.438 mm Primary Applications Military Radar Systems Ka-Band Sat-Com Point to Point Radio Fixtured Data Product Description V = 6V, I = 1050mA D D 25 The TriQuint TGA4516 is a High Power MMIC Amplifier 20 for Ka-band applications. The part is designed using S21 15 TriQuints 0.15um power pHEMT process and is soldered to a CuMo thermal spreader. The small chip 10 size is achieved by utilizing TriQuints 3 metal layer 5 interconnect (3MI) design technology that allows 0 compaction of the design over competing products. -5 S22 -10 The TGA4516 provides >33 dBm saturated output S11 -15 power, and has typical gain of 18 dB at a bias of 6V and -20 1050mA (Idq). The current rises to 1.9A under RF drive. -25 30 32 34 36 38 40 This HPA is ideally suited for many applications such as Frequency (GHz) Military Radar Systems, Ka-band Sat-Com, and Point- Pout Pin =20dBm to-Point Radios. 35 The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. 34 33 Lead-Free & RoHS compliant. 32 31 30 30 32 34 36 38 40 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw tqs.com November 2011 Rev C S-Parameters (dB) Pout (dBm)TGA4516-TS TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES + V Positive Supply Voltage 6.5 V 2/ - V Negative Supply Voltage Range -5 TO 0 V + I Positive Supply Current 3 A 2/ 3/ I Gate Supply Current 85 mA 3/ G P Input Continuous Wave Power 24 dBm IN P Power Dissipation 12.7 W 2/ D o T Operating Channel Temperature 200 C 4/ CH o T Mounting Temperature (30 Seconds) 320 C M o T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw tqs.com November 2011 Rev C