TGA4521 Qorvo

TGA4521 32 45 GHz Wide Band Driver Amplifier Key Features Frequency Range: 32 - 45 GHz 25 dBm Nominal Psat 38 GHz 24 dBm P1dB 38 GHz 16 dB Nominal Gain 38 GHz 33 dBm OTOI 16dBm/Tone Bias: 6 V 175 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 1.60 x 0.75 x 0.10 mm (0.063 x 0.030 x 0.004 in) Primary Applications Measured Fixtured Data Bias Conditions: Vd = 6 V, Idq = 175 mA Digital Radio Point-to-Point Radio Point-to-Multipoint Communications 25 Military SAT-COM 20 Gain 15 10 Product Description 5 0 IRL The TriQuint TGA4521 is a compact Driver -5 Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuints -10 ORL 0.15um power pHEMT production process. -15 32 34 36 38 40 42 44 46 48 The TGA4521 nominally provides 25 dBm Frequency (GHz) saturated output power, and 24 dBm output power at 1dB Gain compression 38 GHz. It also has typical gain of 16 dB. 27 The part is ideally suited for low cost emerging 26 markets such as Digital Radio, Point-to-Point Psat Radio and Point-to-Multi Point Communications. 25 24 The TGA4521 is 100% DC and RF tested on-wafer P1dB 23 to ensure performance compliance. 22 Lead-Free & RoHS compliant. 21 20 Evaluation boards are available upon request. 19 32 34 36 38 40 42 44 46 48 Frequency (GHz) 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com June 2008 Rev S-Parameters (dB) Output Power (dBm)TGA4521 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 6.5 V 2/ Vg Gate Voltage Range -2 TO 0 V Id Drain Current 350 mA 2/ 3/ Ig Gate Current 9 mA 3/ P Input Continuous Wave Power 20 dBm IN P Power Dissipation See note 4/ 2/ D 0 T Operating Channel Temperature 150 C5/ 6/ CH 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: 0 0 0 P (max) = (150 C T C) / 70 ( C/W) D BASE Where T is the base plate temperature. BASE 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com June 2008 Rev