TGA4522 Qorvo

TGA4522 33 47 GHz Wide Band Driver Amplifier Key Features Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat 38GHz 27 dBm P1dB 38 GHz 36 dBm OTOI Pin = 19 dBm/Tone 18 dB Nominal Gain 38GHz 15 dB Nominal Return Loss 38GHz Bias: 6 V 400 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in) Primary Applications Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM Measured Fixtured Data Product Description Bias Conditions: Vd = 6 V, Idq = 400 mA 25 The TriQuint TGA4522 is a compact Driver Gain 20 Amplifier MMIC for Ka-band and Q-band 15 applications. The part is designed using TriQuints 10 0.15um power pHEMT production process. 5 0 The TGA4522 nominally provides 27.5 dBm -5 saturated output power, and 27 dBm output power -10 IRL at 1dB Gain compression 38 GHz. It also has -15 ORL typical gain of 18 dB, and return loss of 15 dB. -20 -25 The part is ideally suited for low cost emerging 32 34 36 38 40 42 44 46 48 markets such as Digital Radio, Point-to-Point Frequency (GHz) Radio and Point-to-Multi Point Communications. 30 29 The TGA4522 is 100% DC and RF tested on-wafer Psat 28 to ensure performance compliance. 27 P1dB Lead-Free & RoHS compliant. 26 25 24 23 22 32 34 36 38 40 42 44 46 48 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev - S-parameters (dB) Pout (dBm)TGA4522 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 8 V 2/ Vg Gate Voltage Range -2 TO 0 V Id Drain Current 700 mA 2/ 3/ Ig Gate Current 16 mA 3/ P Input Continuous Wave Power 23 dBm IN P Power Dissipation 4.2 W 2/ D T Operating Channel Temperature 200 C 5/ 6/ CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 C, the median life is 7.3E+3 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -