TGA4516 Ka Band 2W Power Amplifier Key Features 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in Primary Applications Military Radar Systems Ka-Band Sat-Com Point to Point Radio Product Description Fixtured Data V = 6V, I = 1050mA D D The TriQuint TGA4516 is a High Power MMIC 25 AAmmpplliiffiieerr ffoorr KKaa--bbaanndd aapppplliiccaattiioonnss.. TThhee ppaarrtt iiss designed using TriQuints 0.15um power pHEMT 20 S21 process. The small chip size is achieved by utilizing 15 TriQuints 3 metal layer interconnect (3MI) design 10 technology that allows compaction of the design over 5 competing products. 0 -5 The TGA4516 provides >33 dBm saturated output S22 -10 power, and has typical gain of 18 dB at a bias of 6V S11 -15 and 1050mA (Idq). The current rises to 1.9A under RF -20 drive. -25 30 32 34 36 38 40 This HPA is ideally suited for many applications such Frequency (GHz) as Military Radar Systems, Ka-band Sat-Com, and Point-to-Point Radios. Pout Pin =20dBm 35 The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. 34 33 Lead-Free & RoHS compliant. 32 31 30 30 32 34 36 38 40 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com July 2011 Rev A S-Parameters (dB) Pout (dBm)TGA4516 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES + V Positive Supply Voltage 6.5 V 2/ - V Negative Supply Voltage Range -5 TO 0 V + I Positive Supply Current 3 A 2/ 3/ I Gate Supply Current 85 mA 3/ G P Input Continuous Wave Power 267 mW IN P Power Dissipation 12.7 W 2/ 4/ D T Operating Channel Temperature 200 C 5/ 6/ CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life iiss 77..33EE33 hhrrss.. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com July 2011 Rev A