TGA3504-SM 2 - 30 GHz GaAs Wideband Gain Block Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Functional Block Diagram Product Features Frequency Range: 2 30 GHz 32 31 30 29 28 27 26 25 Small Signal Gain: 11.5 dB mid-band Return Loss: >9 dB NF: 3.4 dB typical P1dB: 8 dBm, PSAT = 12 dBm at PIN = 5 dBm OTOI: 17 dBm at Pout/tone = 5 dBm + Bias: V = 5 V (VD = 3 V), IDQ = 50 mA, VG = -1.5 V Typical, V = 0 V CTRL Package Dimensions: 5 x 5 x 1.5 mm 33 9 10 11 12 13 14 15 16 General Description Pad Configuration TriQuints TGA3504-SM is a packaged wideband gain Pad No. Symbol block with adjustable gain control giving the user extra 1-4, 6-13, 15-21, 23-27, 29, 31-32 Gnd flexibility to fine tune system performance. Operating from 2 to 30 GHz, the TGA3504-SM provides 8 dBm 5 RFIN P1dB and 11 dB of small signal gain with return losses 14 V G1 of greater than 9 dB. 22 RFOUT + 28 V The TGA3504-SM is fabricated on TriQuints TQPHT15 30 VCTRL 0.15 um GaAs pHEMT process and is offered in a 33 Gnd robust 5x5 mm air-cavity QFN. With integrated DC blocking caps and fully matched to 50ohms, the TGA3503-SM is easily integrated in both commercial and military system architectures. Lead-free and RoHS compliant Ordering Information Evaluation Boards are available upon request. Part ECCN Description 2 30 GHz GaAs TGA3504-SM EAR99 Wideband Gain Block Preliminary Datasheet: Rev - 09-18-14 Disclaimer: Subject to change without notice - 1 of 11 - 2014 TriQuint www.triquint.com TGA3504-SM 2 - 30 GHz GaAs Wideband Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Value (1) Parameter Value (1) + + Bias Voltage (V ) 10 V Supply Voltage (V ) 5 V Drain Voltage (V ) 6 V Drain Voltage (V ) 3 V D D Gate Voltage Range (V ) -5 to 0 V G1 Drain Current (IDQ) 50 mA Control Voltage Range (VCTRL) -1 to 3.9 V (2) Gate Voltage (VG1) -1.5 V Typical Drain Current (I ) 72 mA D Control Voltage (V ) 0 V CTRL Gate Current (IG) -10 to 19 mA Temperature (T ) -40 to 85 C BASE Control Current (I ) -0.5 to 16 mA CTRL Notes: Power Dissipation, 85 C (P ) 1.3 W 1. Electrical specifications are measured at specified test DISS conditions. Specifications are not guaranteed overall Input Power, CW, 50 , (PIN) 13 dBm operating conditions Channel temperature (T ) 200 C CH Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. + 2. Assure V V 8 V. Compute V = V - I *40 D CTRL D DQ Electrical Specifications 0 + Test conditions unless otherwise noted: 25 C, V = 5 V, IDQ = 50 mA, VG1 = -1.5 V Typical, VCTRL = 0 V, CW Parameter Min Typical Max Units Operational Frequency Range 2 30 GHz Small Signal Gain >10 dB Input Return Loss >9 dB Output Return Loss >9 dB Noise Figure 3.4 dB Output Power at 1 dB Gain Compression 10 dBm Output TOI at Pout/tone = 5 dBm 17 dBm Preliminary Datasheet: Rev - 09-18-14 Disclaimer: Subject to change without notice - 2 of 11 - 2014 TriQuint www.triquint.com