TGA2976-SM Qorvo

TGA2976-SM 0.1 3.0 GHz 10W GaN Power Amplifier Product Overview Qorvos TGA2976-SM is a wideband cascode amplifier fabricated on Qorvos production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40 V operation. The TGA2976-SM operates from 0.1 - 3.0 GHz and provides greater than 10 W of saturated output power AC-QFN 4x4 mm 14L with greater than 13 dB of large signal gain and greater than 38% power-added efficiency. Key Features The TGA2976-SM is available in a low-cost, surface mount Frequency Range: 0.1 3.0 GHz 14 lead 4x4 Air Cavity laminate package. It is ideally suited to support both radar and communication applications PSAT: >40 dBm at PIN = 27 dBm across defense and commercial markets as well as PAE: 48% mid-band electronic warfare. The TGA2976-SM is fully matched to Large Signal Gain: >13 dB 50 at both RF ports allowing for simple system Small Signal Gain: >20 dB integration. DC blocks are required on both RF ports and Bias: V = 40 V, I = 360 mA D DQ the drain voltage must be injected through an off chip bias- tee on the RF output port. Wideband Flat Gain and Power Package Dimensions: 4.0 x 4.0 x 1.64 mm Lead-free and RoHS compliant. Applications Functional Block Diagram Commercial and military radar Communications Electronic Warfare Ordering Information Part No. Description Top View TGA2976-SM 0.1-3.0 GHz 10 W GaN Power Amplifier TGA2976-SM EVB TGA2976-SM Evaluation Board Data Sheet Rev. D, May 2020 Subject to change without notice 1 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. TGA2976-SM 0.13.0 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Value Drain Voltage (VD) 80 V Drain Voltage (VD) 40 V Gate Voltage Range (VG1) -8 to 0 V Drain Current (IDQ) 360 mA Gate Voltage Range (V ) 0 to 40 V Gate Voltage Range (V ) 2.8 to 2.0 V G2 G1 Drain Current (I ) 760 mA Gate Voltage (V ) +17.7 V (Typ.) D G2 Electrical specifications are measured at specified test conditions. Gate Current (I ) See plot on pg. 3 G1 Specifications are not guaranteed over all recommended operating Gate Current (I ) See plot on pg. 3 G2 conditions. Power Dissipation (P ), 85C 28 W DISS Input Power (PIN), CW, 50 , 85C, 33 dBm Input Power (P ), CW, VSWR 3:1, V = IN D 33 dBm 40V, 85C Mounting Temperature 260C Storage Temperature -55 to 150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.1 3.0 GHz Small Signal Gain > 20 dB Input Return Loss > 5 dB Output Return Loss > 9 dB Output Power P = 27 dBm > 40 dBm IN Power Added Efficiency P = 27 dBm, mid-band 48 % IN 3rd Order Intermodulation 120 mA, P /tone = 28 dBm -30 dBc OUT 5th Order Intermodulation 120 mA, P /tone = 28 dBm -38 dBc OUT Small Signal Gain Temperature -0.03 dB/C Coefficient Output Power Temperature -0.009 dBm/C Coefficient Recommended Operating 40 50 V Voltage Notes: 1. Test conditions unless otherwise noted: 25C , V = 40 V, I = 360 mA, V = -2.4 V, V = +17.7 V D DQ G1 G2 Data Sheet Rev. D, May 2020 Subject to change without notice 2 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved.