TGA2830-SM 2.7 to 3.5 GHz, 18 W GaN Power Amplifier Product Overview Qorvos TGA2830-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.5 GHz. The TGA2830-SM is designed using Qorvos TQGaN25 0.25-m GaN on SiC process. The TGA2830-SM typically provides more than 42.5 dBm of saturated output power, 54% power-added efficiency, and QFN 5x5 mm 24L 30.5 dB small signal gain. It can operate under both pulse and CW conditions. Product Features The TGA2830-SM is available in a low-cost, surface mount 24 lead 5 x 5 Overmold QFN. It is ideally suited to support Frequency Range: 2.7-3.5 GHz both commercial and defense related radar applications. PSAT: > 42.5 dBm (PIN = 18 dBm) PAE: > 54 % (PIN = 18 dBm) Both RF ports have integrated DC blocking capacitors and Small Signal Gain: > 30.5 dB are fully matched to 50 ohms. Return Loss: > 11 dB Bias: VD = 20-32 V, IDQ = 225 mA Lead-free and RoHS compliant Pulsed VD: PW = 100 us, DC = 10 % Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram Applications Commercial and Military Radar 1 18 2 17 RF IN 3 16 RF OUT 4 15 5 14 6 13 Ordering Information Part Description TGA2830-SM 2.7-3.5 GHz, 18 W GaN Power Amplifier TGA2830-SM EVB TGA2830-SM Evaluation Board Data Sheet Rev. B, September 2019 Subject to change without notice 1 of 18 www.qorvo.com 7 24 8 23 9 22 10 21 11 20 12 19 TGA2830-SM 2.7 to 3.5 GHz, 18 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 2032 V Gate Voltage Range (VG) 8 to 0 V Drain Current (I ) 175275 mA DQ Drain Current (ID1) 225 mA Drain Current Under RF Drive (I ) See plots p. 8 D DRIVE Drain Current (ID2) 1250 mA Gate Voltage Range (VG) 2.9 to 2.0 V Gate Current (I ) See Graph (page 3) G Gate Current Under RF Drive (I ) See plots p. 8 G DRIVE Power Dissipation (P ), 85 C 35 W DISS Operating Temperature Range 40 to +85 C Input Power (P ), CW, 50 , 85 C 30 dBm IN Electrical specifications are measured at specified test Input Power (P ), CW, V 10:1, IN SWR 23 dBm conditions. Specifications are not guaranteed over all VD = 28 V, 85 C recommended operating conditions. Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 225 mA, Pulsed VD: PW = 100 us, DC = 10 % Parameter Min Typical Max Units Operational Frequency Range 2.7 3.5 GHz Small Signal Gain >30.5 dB Input Return Loss >15 dB Output Return Loss >11 dB Output Power at Saturation (PIN = 18 dBm) >42.5 dBm Power-Added Efficiency (PIN = 18 dBm) >54 % Gate Leakage (VD = 10 V, VG = 3.7 V) 7.83 0.0001 mA Gain Temperature Coefficient 0.05 dB/C Power Temperature Coefficient 0.004 dBm/C Data Sheet Rev. B, September 2019 Subject to change without notice 2 of 18 www.qorvo.com