TGA2975-SM 2.7 to 3.5 GHz, 12 W GaN Power Amplifier General Description Qorvos TGA2975-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.5 GHz. The TGA2975-SM is designed using Qorvos TQGaN25 0.25-m GaN on SiC process. The TGA2975-SM typically provides more than 41 dBm of saturated output power, 52% power-added efficiency, and 31 dB small signal gain. It can operate under both pulse and CW conditions. QFN 5 x 5 mm 24 L The TGA2975-SM is available in a low-cost, surface mount 24 lead 5 mm x 5 mm overmold QFN. It is ideally suited to support both commercial and defense related radar Product Features applications. Frequency Range: 2.7-3.5 GHz PSAT: >41 dBm (at PIN = 16 dBm) Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms. PAE: >52 % (at PIN = 16 dBm) Small Signal Gain: 31 dB Lead-free and RoHS compliant Return Loss: > 9 dB Bias: VD = 28 V, IDQ = 175 mA Evaluation Boards are available upon request. Pulsed VD: PW = 100 us, DC = 10 % Package Dimensions: 5.0 x 5.0 x 0.85 mm Applications Functional Block Diagram Commercial and Military Radar 1 18 Pad Configuration 2 17 Pad no. Symbol RF IN 3 16 RF OUT 1, 2, 415, 17- 20, 24 NC 4 15 3 RF IN 5 14 16 RF OUT 21 DRAIN 2 6 13 22 DRAIN 1 23 GATE Ordering Information Part Description TGA2975-SM 2.7-3.5 GHz, 12 W GaN Power Amplifier TGA2975-SM EVB TGA2975-SM Evaluation Board Data Sheet Rev A, June 2019 Subject to change without notice 1 of 18 www.qorvo.com 7 24 8 23 9 22 10 21 11 20 12 19 TGA2975-SM 2.7 to 3.5 GHz, 12 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (VG) 8 to 0 V Drain Current ( IDQ) 175 mA Drain Current (ID1) 225 mA Electrical specifications are measured at specified test Drain Current (ID2) 1250 mA conditions. Specifications are not guaranteed over all recommended operating conditions. Gate Current (I ) See Graph (page 12) G Power Dissipation (P ), 85 C 27 W DISS Input Power (P ), CW, 50 , 85 C 30 dBm IN Input Power (P ), CW, VSWR 10:1, IN 23 dBm VD = 28 V, 85 C Channel Temperature (T ) 275 C CH Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 28 V, I = 175 mA, Pulsed V : PW = 100 us, DC = 10 % D DQ D Parameter Min Typical Max Units Operational Frequency Range 2.7 3.5 GHz Small Signal Gain 31 dB Input Return Loss > 15 dB Output Return Loss > 9 dB Output Power at Saturation (PIN = 16 dBm) 40 > 41 dBm Power-Added Efficiency (P = 16 dBm) 45 > 52 % IN Gain Temperature Coefficient 0.05 dB/C Power Temperature Coefficient 0.007 dBm/C Data Sheet Rev A, June 2019 Subject to change without notice 2 of 18 www.qorvo.com