TGA2958 1318GHz 2W GaN Driver Amplifier Product Description Qorvos TGA2958 is a driver amplifier fabricated on Qorvos QGaN15 GaN on SiC process. The TGA2958 operates from 13 18 GHz and achieves 2 W of saturated output power with > 21 dB of large signal gain and at least 25% power-added efficiency. The TGA2958 is an ideal choice to drive Qorvos high performing Ku-band GaN HPAs allowing the user to operate the driver and HPA off similar voltage rails. Fully matched to 50 ohms with integrated DC blocking Product Features capacitors on both I/O ports, the TGA2958 is ideally suited for a variety of military and commercial radar and Frequency Range: 13 - 18 GHz communications applications. PSAT: >33dBm at PIN = 12dBm Lead free and RoHS compliant. PAE: > 25 % at P = 12 dBm IN Small Signal Gain: > 25 dB Evaluation Boards are available upon request. Input Return Loss: > 7 dB Output Return Loss: > 8 dB Bias: V = +20V, I = 70mA, V = 2.7V Typical D DQ G Functional Block Diagram Chip Dimensions: 1.25 x 2.14 x 0.10 mm Performance under CW operation 4 2 3 5 Applications 6 1 Satellite Communications Data Links Radar General Purpose Ordering Information Part No. Description TGA2958 1318GHz 2W GaN Driver Amplifier - 1 of 13 - Data Sheet Rev. C, January 2021 www.qorvo.com TGA2958 1318GHz 2W GaN Driver Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 29.5 V D Drain Voltage (VD) CW 20 V Gate Voltage Range (V ) -5 to 0 V Drain Current (I ) 70 mA G DQ Drain Current common drain 576 mA Drain Current Under RF Drive See plots p. 7 st - 1 Stage (ID1) 72 mA (I ) D DRIVE nd - 2 Stage (I ) 192 mA D2 Gate Voltage (V ) 2.7 V (Typ.) G rd - 3 Stage (ID3) 384 mA Gate Current Under RF Drive Gate Current at Tch = 200 C: See plots p. 7 (IG DRIVE) st - 1 Stage (I ) -0.2 to 1.2 mA G1 nd Temperature (T ) -40 to 85 C BASE - 2 Stage (IG2) -0.4 to 2.4 mA rd - 3 Stage (IG3) -0.8 to 2.4 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85 C 13 W recommended operating conditions. Input Power (P ), CW, 50 , IN 27 dBm VD = 22 V, IDQ = 70 mA, 85 C Input Power (PIN), CW, VSWR 3:1, 20 dBm V = 22 V, I = 70 mA, 85 C D DQ Mounting Temperature 320 C (30 Seconds) Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13 18 GHz Small Signal Gain > 25 dB Input Return Loss > 7 dB Output Return Loss > 8 dB Output Power at PIN = 12 dBm > 33 dBm Power Added Efficiency at PIN = 12 dBm > 25 % Large Signal Gain at P = 12 dBm > 21 dB IN IM3 (Pout/tone = 24 dBm, 1 MHz spacing) -27 dBc IM5 (Pout/tone = 24 dBm, 1 MHz spacing) -33 dBc Small Signal Gain Temperature Coefficient -0.07 dB/C Output Power Temperature Coefficient - at PIN = 0 dBm -0.06 dBm/C - at P = 12 dBm -0.01 IN Recommended Operating Voltage 20 22 V Test conditions unless otherwise noted: 25 C, V = +20V, I = 70mA, V = 2.7V Typical, CW. D DQ G - 2 of 13 - Data Sheet Rev. C, January 2021 www.qorvo.com