TGA4508 Ka Band Low Noise Amplifier Key Features Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Noise Figure 14 dBm Nominal P1dB 38 GHz Bias 3 V, 40mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.7 x 0.8 x 0.1 mm (0.067 x 0.031 x 0.004) in Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Point-to-Point Radio 40 Point-to-MultiPoint Radio 30 Ka Band VSAT Gain 20 10 0 IRL -10 -20 ORL -30 -40 25 27 29 31 33 35 37 39 41 43 45 Frequency (GHz) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev - Gain & Return Loss (dB ) N oise Figure (dB )TGA4508 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES + V Positive Supply Voltage 5 V 2/ Vg1 Gate 1 Supply Voltage Range -1 V TO 0 V + I Positive Supply Current 190 mA 2/ I Gate Supply Current 6 mA G P Input Continuous Wave Power 12 dBm 2/ IN P Power Dissipation 0.95 W 2/, 3/ D T Operating Channel Temperature 200 C 4/, 5/ CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply . current, input power, and output power shall not exceed P D 3/ When operated at this power dissipation with a base plate temperature of 70 C, the median life is 3.0E3 hours. 4/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS (Ta = 25 C, Nominal) SYMBOL PARAMETER MINIMUM MAXIMUM UNITS Breakdown Voltage gate- V source -30 -5 V BVGS3 Breakdown Voltage gate- V drain -30 -5 V BVGD3 Pinch-off Voltage V -1.0 -0.1 V P1,2,3 Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -