TGA2627-SM 6 12GHz GaN Driver Amplifier Product Description Qorvo s TGA2627-SM is a push-pull driver amplifier fabricated on Qorvo s TQGaN25 0.25um GaN on SiC production process. The TGA2627-SM operates from 6 to 12 GHz and provides 32 dBm of output power with 18 dB of large signal gain and greater than 20 % power- added efficiency. The push-pull topology yields > 40dB of harmonic suppression at Psat. Using GaN MMIC technology and air-cavity ceramic QFN packaging, the TGA2627-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier on lower power architectures. The TGA2627-SM is offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid. It is well- matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Functional Block Diagram Product Features Frequency Range: 6 - 12 GHz Push-Pull Configuration Low Harmonic Content -40 dBc Psat Small Signal Gain: 27 dB Power: 32 dBm PAE: 24 % 32 dBm RF output Harmonic Suppression: 40 dBc Psat IM3: -20 dBc 26 dBm RF output Input Return Loss: 15 dB Top View Output Return Loss: 10 dB Bias: V = 25 V, I = 200 mA D DQ Package Dimensions: 5.0 x 5.0 x 1.42 mm Applications Ordering Information Commercial and military radar Part No. Description Communications TGA2627-SM 612GHz 2W GaN Driver Amplifier Electronic Warfare (EW) 1121067 TGA2627-SMEvaluation Board - 1 of 14 - Data Sheet Rev B, Nov 28, 2018 Subject to change without notice www.qorvo.com TGA2627-SM 6 12GHz GaN Driver Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (V ) 25 V D Drain Current (IDQ) 200 mA mA Drain Current Under RF Drive (ID DRIVE) See plots Gate Voltage (V ) 2.5 V G mA Gate Current Under RF Drive (IG DRIVE) See plots Temperature (T ) 40 +85 C BASE Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operating Frequency Range 6 12 GHz Output Power ( Pin = 13 dBm) 32 dBm Power Added Efficiency ( Pin = 13 dBm) 24 % Small Signal Gain 27 dB Input Return Loss 16 dB Output Return Loss 10 dB IM3 (POUT/tone < 26 dBm) -20 dBc nd 2 Harmonic Suppression -40 dBc rd 3 Harmonic Suppression -40 dBc Output Power Temperature Coefficient -0.012 dB/C Test conditions unless otherwise noted: TBASE=+25C, VD=+25V, IDQ=200 mA, VG = -2.5V typical, CW Mode Data de-embedded to reference planes - 2 of 14 - Data Sheet Rev B, Nov 28, 2018 Subject to change without notice www.qorvo.com