TGA2597-SM 26GHz GaN Driver Amplifier Product Description Qorvo s TGA2597-SM is a packaged driver amplifier fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. The TGA2597-SM operates from 2.0 to 6.0GHz and provides 32 dBm of output power with14 dB of large signal gain and 31 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the TGA2597-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The TGA2597-SM is offered in a 4x4 mm plastic overmold QFN. It is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Functional Block Diagram Product Features 19 20 18 17 16 Frequency Range: 26GHz Small Signal Gain: > 24 dB Power: > 32 dBm 15 1 PAE: > 31 % 14 2 IM3: < -24 dBc 3 13 Bias: V = 25 V, I = 40 mA D DQ RF In RF Out 4 12 Package Dimensions: 4.0 x 4.0 x 0.85 mm 5 11 21 Performance is typical across frequency. Please reference electrical specification table and data plots for 6 7 8 9 10 more details Applications Ordering Information Commercial & Military Radar Part No. Description Communications TGA2597-SM Driver Amplifier, Waffle Pack, Qty 50 TGA2597-SMTR7 Tape and Reel, 7, Qty 500 Electronic Warfare (EW) TGA2597-SMEVB TGA2597-SM Evaluation Board, Qty 1 - 1 of 15 - Data Sheet Rev H, Sept. 2021 Subject to change without notice www.qorvo.com TGA2597-SM 26GHz GaN Driver Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) 25 V mA Drain Current (IDQ) 40 See mA Drain Current Under RF Drive (ID DRIVE) Performance Plots V Gate Voltage (VG) 2.5 See Gate Current Under RF Drive (I ) Performance mA G DRIVE Plots Temperature (T ) 40 +85 C BASE Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 2 6 GHz Output Power P = 18 dBm > 32 dBm IN Power Added Efficiency PIN= 18 dBm > 31 % Small Signal Gain > 24 dB Input Return Loss 20 dB Output Return Loss > 5 dB IM3 P /Tone 24dBm, f = 10MHz <24 dBc OUT Gate Leakage VD=+10V, VG=3.7 V -0.924 -0.05 mA Gain Temperature Coefficient 0.050 dB/C Output Power Temperature Coefficient -0.009 dB/C Test conditions unless otherwise noted: TBASE=+25C, VD=25V, VG=2.5 V, CW - 2 of 15 - Data Sheet Rev H, Sept. 2021 Subject to change without notice www.qorvo.com