TGA2611 2 6 GHz GaN Low Noise Amplifier Product Overview Qorvos TGA2611 is a broadband Low Noise Amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). Covering 26 GHz, the TGA2611 can provide 22 dBm P1dB power, 25 dB of small signal gain, 1.5 dB of noise figure and 32 dBm of OTOI. In addition to the high overall electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive up to 2 W of input power without performance degradation, Qorvos TGA2611 provides flexibility regarding receive chain protection never seen before with GaAs technology. Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2611 is ideally suited for radar and satellite communication applications. Functional Block Diagram Key Features Frequency Range: 26 GHz NF: 1.5 dB OTOI: 32 dBm Small Signal Gain: 25 dB Return Loss: >10 dB P1dB: 22 dBm RF input power survivability: 33 dBm (CW) Bias: VD = 10 V, IDQ = 110 mA, VG = -2.3 V Typical Chip Dimensions: 2.1 x 1.5 x 0.10 mm Ordering Information Applications Part No. Description Commercial and Military Radar TGA2611 2 6 GHz GaN LNA, Gel Pack, Qty 50 Satellite Communications 1110610 TGA2611 Evaluation Board, Qty 1 Data Sheet Rev. C, December 2020 Subject to change without notice 1 of 13 www.qorvo.com TGA2611 2 6 GHz GaN Low Noise Amplifier Absolute Maximum Ratings Parameter Rating Units Drain Voltage (VD) 40 V Drain Current (I ) 200 mA D Gate Voltage Range (VG) 5 to 0 V Gate Current (IG) -1 to 4.2 mA RF Input Power (50 , CW) 33 dBm Power Dissipation, 85 C (P ) 6 W DISS Channel Temperature, T 275 C CH Mounting Temperature (30 seconds) 320 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage (VD) 10 V Drain Current (quiescent, I ) 110 mA DQ Gate Voltage (VG typical) 2.3 V Operating Temperature Range 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VD = +10 V, IDQ = 110 mA, Temp. = +25C. Data de-embedded to MMIC bond wires. Parameter Min Typ Max Units Operating Frequency 2 6 GHz Small Signal Gain 25 dB Input Return Loss >10 dB Output Return Loss >10 dB Noise Figure 1.5 dB Output Power at 1 dB Gain Compression 22 dBm Input Power Survivability (CW) 33 dBm Output TOI 32 dBm Gain Temperature Coefficient -0.03 dB/C Noise Figure Temperature Coefficient 0.007 dB/C Data Sheet Rev. C, December 2020 Subject to change without notice 2 of 13 www.qorvo.com