TGA2611-SM 26GHz GaN LNA Product Description Qorvo s TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC process. The TGA2611-SM operates from 2 to 6 GHz and typically provides >18 dBm P1dB, > 22 dB of small signal gain and 30 dBm of OTOI with 1.0 dB NF. In addition to the high overall electrical performance, this GaN amplifier also provides a high level of input power robustness which allows more flexibility in designing the receive chain circuit protection. The TGA2611-SM is available in a low cost, surface mount 20-lead 4x4 mm plastic QFN. It is ideally suited to support both radar and satellite communication applications. Both RF ports have intergraded DC blocking caps and are fully matched to 50 ohms. Product Features Frequency Range: 26GHz Functional Block Diagram NF: 1.0 dB OTOI: 30 dBm POUT/Tone = 18 dBm Small Signal Gain: 22 dB Return Loss: > 10 dB P1dB: 18 dBm PSAT = 26 dBm PIN = 10 dBm Bias: V = 10 V, I = 100 mA V = - 2.3 V (Typical) D DQ G Package Dimensions: 4.0 x 4.0 x 0.85 mm Applications Ordering Information Commercial & Military Radar Part No. Description Communications TGA2611-SM 26GHz GaN LNA 1097070 TGA2611-SM Evaluation Board - 1 of 13 - Data Sheet Rev C, June 2020 Subject to change without notice www.qorvo.com TGA2611-SM 26GHz GaN LNA Absolute Maximum Ratings Recommended Operating Conditions Parameter Range/Value Units Parameter Drain Voltage (V ) +40 V D Drain Voltage (V ) 10 V D Gate Voltage (VG) 5 to 0 V Gate Voltage (VG) -2.3 V Typical Drain Current (ID) 300 mA Gate Current (I ) 17 mA G Quiescent Drain Current (I ) 100 mA DQ Power Dissipation, 85 C (P ) 6 W DISS Temperature (T ) -40 to 85 C BASE RF Input Power, CW, 50 30 dBm Electrical performance is measured under conditions noted in the Channel Temperature (TCH) +275 C electrical specifications table. Specifications are not guaranteed over Mounting Temperature all recommended operating conditions. +260 C (30 seconds maximum) Storage Temperature 55 to +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 2 6 GHz Small Signal Gain > 22 dB Input Return Loss > 10 dB Output Return Loss > 10 dB Noise Figure 1 dB Output Power 1 dB Gain Compression (P ) > 18 dBm 1dB POUT/Tone = 18dBm, Output TOI 30 dBm f = 10MHz Small Signal Gain Temperature Coefficient 0.03 dB/C Noise Figure Temperature Coefficient 0.007 dB/C Test conditions unless otherwise noted: T =+25C, V = 10V, I = 100mA, V = -2.3V Typical, CW BASE D DQ G Thermal and Reliability Information Parameter Values Units Conditions (1,2,3) Thermal Resistance (JC) 12.6 C/W TBASE = +85C, VD = 10V, IDQ = 100 mA, I = 195mA, P = 10dBm, P = 28dBm, D DRIVE IN OUT Freq. = 4 GHz, PDISS = 1.3W, CW Channel Temperature (T ) 101.4 C CH Notes: 1. Thermal resistance is measured to package backside 2. Base or ambient temperature is 85 C 3. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 13 - Data Sheet Rev C, June 2020 Subject to change without notice www.qorvo.com