X-On Electronics has gained recognition as a prominent supplier of TGA2612-SM RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2612-SM RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2612-SM Qorvo

TGA2612-SM electronic component of Qorvo
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Part No.TGA2612-SM
Manufacturer: Qorvo
Category: RF Amplifier
Description: TriQuint (Qorvo) RF Amplifier 6-12GHz NF 2 dB P1dB 19 dBm
Datasheet: TGA2612-SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 140.1019
25 : USD 125.7833
100 : USD 116.4694
250 : USD 110.376
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Amplifier Type
Brand
Input Return Loss
Product
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2612-SM from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2612-SM and other electronic components in the RF Amplifier category and beyond.

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TGA2612-SM 6-12 GHz GaN LNA Applications Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 612 GHz NF: 2 dB P1dB: 19 dBm OTOI: 28 dBm Small Signal Gain: 22 dB Return Loss: >7 dB Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical Package Dimensions: 4 x 4 x 0.33 mm General Description Pad Configuration TriQuints TGA2612-SM is a packaged broadband Low Pad No. Symbol Noise Amplifier fabricated on TriQuints production 1, 2, 4-9, 11, 12, 14, N/C 0.25um GaN on SiC process (TQGaN25). Covering 6 15, 17-20 12 GHz, the TGA2612-SM typically provides >23 dM 3 RF IN small signal gain, 19 dBm P1dB, and 27 dBm OTOI 10 VG with <2 dB of Noise Figure. In addition to the high 13 RF OUT electrical performance, this GaN amplifier also provides 16 VD a high level of input power robustness. Able to survive up to 2W of input power without performance degradation, TriQuints TGA2612-SM provides flexibility regarding receive chain protection resulting in lower costs and reduced board space. The TGA2612-SM is available in a surface mount 20- lead 4x4mm QFN. It is ideally suited for both radar and communications applications. Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2612-SM is ideally suited for both military and commercial radar and communications applications. Ordering Information Lead-free and RoHS compliant Part ECCN Description TGA2612-SM EAR99 6 12 GHz GaN LNA Evaluation Boards are available upon request. Preliminary Datasheet: Rev - 06-04-14 Disclaimer: Subject to change without notice - 1 of 14 - 2014 TriQuint www.triquint.com TGA2612-SM 6-12 GHz GaN LNA Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40 V Drain Voltage (V ) 10 V D D Gate Voltage Range (V ) -5 to 0 V Drain Current (I ) 100 mA G DQ Drain Current (I ) 300 mA D Gate Voltage (VG) -2.3 V Typical Gate Current (IG) -1 to 7 mA Temperature (TBASE) -40 to 85 C Power Dissipation, 85 C (P ) 6 W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed overall operating Input Power, CW, 50 , (PIN) 33 dBm conditions. Channel temperature (T ) 275 C CH Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical Parameter Min Typical Max Units Operation Frequency Range 6 12 GHz Small Signal Gain 22 dB Return Loss >7 dB Noise Figure 2 dB Output Power at 1 dB Gain Compression 19 dBm Output Power at P = 10 dBm 25 dBm IN Output TOI 28 dBm Gain Temperature Coefficient -0.05 dB/C Noise Figure Temperature Coefficient -0.01 dB/C Preliminary Datasheet: Rev - 06-04-14 Disclaimer: Subject to change without notice - 2 of 14 - 2014 TriQuint www.triquint.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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