TGA2612-SM 6-12 GHz GaN LNA Applications Commercial and Military Radar Communications Product Features Functional Block Diagram Frequency Range: 612 GHz NF: 2 dB P1dB: 19 dBm OTOI: 28 dBm Small Signal Gain: 22 dB Return Loss: >7 dB Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical Package Dimensions: 4 x 4 x 0.33 mm General Description Pad Configuration TriQuints TGA2612-SM is a packaged broadband Low Pad No. Symbol Noise Amplifier fabricated on TriQuints production 1, 2, 4-9, 11, 12, 14, N/C 0.25um GaN on SiC process (TQGaN25). Covering 6 15, 17-20 12 GHz, the TGA2612-SM typically provides >23 dM 3 RF IN small signal gain, 19 dBm P1dB, and 27 dBm OTOI 10 VG with <2 dB of Noise Figure. In addition to the high 13 RF OUT electrical performance, this GaN amplifier also provides 16 VD a high level of input power robustness. Able to survive up to 2W of input power without performance degradation, TriQuints TGA2612-SM provides flexibility regarding receive chain protection resulting in lower costs and reduced board space. The TGA2612-SM is available in a surface mount 20- lead 4x4mm QFN. It is ideally suited for both radar and communications applications. Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2612-SM is ideally suited for both military and commercial radar and communications applications. Ordering Information Lead-free and RoHS compliant Part ECCN Description TGA2612-SM EAR99 6 12 GHz GaN LNA Evaluation Boards are available upon request. Preliminary Datasheet: Rev - 06-04-14 Disclaimer: Subject to change without notice - 1 of 14 - 2014 TriQuint www.triquint.com TGA2612-SM 6-12 GHz GaN LNA Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40 V Drain Voltage (V ) 10 V D D Gate Voltage Range (V ) -5 to 0 V Drain Current (I ) 100 mA G DQ Drain Current (I ) 300 mA D Gate Voltage (VG) -2.3 V Typical Gate Current (IG) -1 to 7 mA Temperature (TBASE) -40 to 85 C Power Dissipation, 85 C (P ) 6 W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed overall operating Input Power, CW, 50 , (PIN) 33 dBm conditions. Channel temperature (T ) 275 C CH Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical Parameter Min Typical Max Units Operation Frequency Range 6 12 GHz Small Signal Gain 22 dB Return Loss >7 dB Noise Figure 2 dB Output Power at 1 dB Gain Compression 19 dBm Output Power at P = 10 dBm 25 dBm IN Output TOI 28 dBm Gain Temperature Coefficient -0.05 dB/C Noise Figure Temperature Coefficient -0.01 dB/C Preliminary Datasheet: Rev - 06-04-14 Disclaimer: Subject to change without notice - 2 of 14 - 2014 TriQuint www.triquint.com