TGA2958-SM 1318GHz 2W GaN Driver Amplifier Product Description The TGA2598-SM is a packaged Ku-band amplifier fabricated on Qorvos 0.1um5 GaN on SiC production process (QGaN15). Operating over a 1318GHz bandwidth, the TGA2598-SM delivers 2W of saturated output power with 20dB large signal gain and > 25% power-added efficiency. This, along with >25dB small signal gain allows it to support a variety of low power Ku- band systems or as a linear, high-voltage driver for Qorvos line of high power Ku-band amplifiers. 14 Lead 4 x 4 Air Cavity Laminate Package Packaged in a 4x4 air-cavity package for high performance and easy handling, the TGA2958-SM is fully matched to 50ohms with integrated DC blocking capacitors on both I/O ports for simple system integration. This makes for an ideal Product Features general purpose RF amplifier which can provide needed functionality across both commercial and defense related Frequency Range: 1318GHz markets. P : 33dBm at P = 13dB m SAT IN PAE: 25% at PIN = 13d Bm Small Signal Gain: 25dB Input Return Loss: > 7dB Output Return Loss: > 1dB3 Bias: VD = +20V, IDQ = 70mA , VG = 2.7V Typical Package Dimensions: 4.0 x 4.0 x 1.mm74 Performance under CW operation Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 14 13 12 11 Applications Satellite Communications Data Links 1 10 Radar 2 9 General Purpose RF OUT RF IN 3 8 Ordering Information 4 5 6 7 Part No. Description TGA2598-SM 1318GHz 2W GaN Driver Amplifi er TGA2958-SM EVB Evaluation Board Data Sheet Rev. D, December 10, 2019 - 1 of 14 - www.qorvo.com TGA2958-SM 1318GHz 2W GaN Driver Amplifier Electrical Specifications Freq. (GHz) Parameter Min Typ Max Units Operational Frequency Range 13 18 GHz Small Signal Gain 25 dB Input Return Loss > 7 dB Output Return Loss > 13 dB 13 31 32.5 Output Power at P = 13dBm 14, 15, 16, 17 32.5 34 dBm IN 18 31.5 33 13 16 22 Power Added Efficiency at P = 13dB m 14, 15, 16, 17 19 28 % IN 18 17 23 Large Signal Gain at P = 13d Bm > 20 dB IN IM3 (Pout/tone = 24dBm, MHz1 spacing) 31 dBc IM5 (Pout/tone = 24dBm, MHz1 spacing) 46 dBc Gate Leakage (V = 20 V, V = -5 V) Abs (Ig) 0 500 A D G Small Signal Gain Temperature Coefficient 0.07 dB/C Output Power Temperature Coefficient - at PIN = 0dBm 0.04 dB/C - at PIN = 12d Bm 0.01 Test conditions unless otherwise noted: 2C, V5 D = +20V, DQI = 70mA, VG = 2.7V Typ, CW Recommended Operating Conditions Parameter Value/Range Drain Voltage (V ) CW 20 - 22V D Drain Current (IDQ) 70mA Drain Current Under RF Drive (ID DRIVE) See plots p.6 Gate Voltage Range, Typical (V ) 2.0to 3.2 V G Gate Current Under RF Drive (IG DRIVE) See plots p.6 Temperature (T ) 40 to 85C BASE Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Data Sheet Rev. D, December 10, 2019 - 2 of 14 - www.qorvo.com