TGA2599-SM 5 8GHz 2W GaN Driver Amplifier Product Description Qorvo s TGA2599-SM is a packaged driver amplifier fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. The TGA2599-SM operates from 5.0 to 8.0GHz and provides 33 dBm of output power with 15 dB of large signal gain and 34 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the TGA2599-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the primary amplifier on lower power architectures. The TGA2599 is offered in a small 4 x 4 mm plastic overmold QFN, fully matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Functional Block Diagram Product Features Frequency Range: 5.0-8.0 GHz 19 17 20 18 16 Small Signal Gain: 23 dB Saturated Power (CW): 33 dBm PAE (CW, Pin = 18 dBm): 34% 15 1 IM3: -25 dBc 26 dBm Pout 2 14 Bias: VD = 25 V, IDQ = 50 mA 3 13 Package Dimensions: 4.0 x 4.0 x 0.85 mm RF In RF Out 12 4 5 11 21 6 7 8 9 10 Top View Applications Ordering Information Commercial and military radar Part No. Description Communications TGA2599-SM 58GHz 2W GaN Driver Amplifier Electronic Warfare (EW) TGA2599-SMEVB01 TGA2599-SMEvaluation Board - 1 of 14 - Data Sheet Rev C, April 2019 Subject to change without notice www.qorvo.com TGA2599-SM 5 8GHz 2W GaN Driver Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) 25 V mA Drain Current (IDQ) 50 Drain Current Under RF Drive (I ) See plots mA D DRIVE Gate Voltage (V ) 2.5 V G mA Gate Current Under RF Drive (IG DRIVE) See plots Temperature (TBASE) 40 +85 C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 5 8 GHz Small Signal Gain 23 dB Input Return Loss 17 dB Output Return Loss 5 dB Output Power (at Pin = 18 dBm) 33 dBm Power Added Efficiency (at Pin = 18 dBm) 34 % Test conditions unless otherwise noted: T =+25C, V =+25V, IDQ=50 mA, VG = -2.5V typical, CW Mode BASE D Data de-embedded to reference planes - 2 of 14 - Data Sheet Rev C, April 2019 Subject to change without notice www.qorvo.com