TGA2594 2731GHz 5W GaN Power Amplifier Product Description Qorvos TGA2594 is a Ka-band power amplifier fabricated on Qorvos 0.15um GaN on SiC process. Operating from 27 to 31GHz, it achieves 5W saturated output power with an efficiency of 28% PAE, and 23dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications. To simplify system integration, the TGA2594 is fully matched to 50ohms with integrated DC blocking caps on both I/O ports. Product Features The TGA2594 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Frequency Range: 27 to 31GHz P : 36.5dBm (P = 18dBm), CW OUT IN Lead-free and RoHS compliant. PAE: 28% (P = 18dBm), CW IN Small Signal Gain: 23dB Return Loss: 10dB IM3 25dBm/tone: 35dBc IM5 25dBm/tone: 45dBc Bias: VD = +20V, IDQ = 140mA, VG 2.5V Typical Chip Dimensions: 3.24 x 1.74 x 0.10mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Satellite Communications 3 6 2 4 5 1 7 Ordering Information 12 11 10 8 9 Part No. Description TGA2594 2731GHz 5W GaN Power Amplifier TGA2594EVB Evaluation Board for TGA2594 Data Sheet Rev. C, May 2021 - 1 of 12 - www.qorvo.com TGA2594 2731GHz 5W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ Max Units Drain Voltage (V ) 29.5 Drain Voltage (V ) +20 V D D Gate Voltage Range (V ) 5 to 0 V Drain Current, Quiescent (I ) 140 mA G DQ Drain Current (I ) 1.4 A Drain Current, RF (I ) See charts page 6 mA D D Drive Gate Current (I ) See chart Gate Voltage Typ. Range (V ) 2 to 3 V G G Power Dissipation (P ), CW, 85C 22 W Operating Temp. Range 40 +25 +85 C DISS Electrical specifications are measured at specified test Input Power (P ), CW, 50 , IN 30 dBm conditions. Specifications are not guaranteed over all VD=22 V, IDQ=280 mA, 85 C recommended operating conditions. Input Power (PIN), CW, 10:1 VSWR, 25 dBm V =22 V , I =280 mA, 25 C D DQ Gate Current Maximum vs. T vs. Stage CH 70 Channel Temperature (TCH) 275 C Total Stage 3 60 Mounting Temperature (30 seconds) 320 C Stage 2 Storage Temperature 40 to 150 C 50 Stage 1 Operation of this device outside the parameter ranges given 40 above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions 30 is not implied. 20 10 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 27 31 GHz Output Power at Saturation, PSAT PIN = +18 dBm 34.6 36.5 dBm Power Added Efficiency, PAE PIN = +18 dBm 28 % Small Signal Gain, S21 23 dB Input Return Loss, IRL 10 dB Output Return Loss, ORL 8 dB RD 3 Intermodulation Products, IM3 POUT/TONE = +25 dBm, Tone Spacing = 1 MHz 35 dBc th 5 Intermodulation Products, IM5 POUT/TONE = +25 dBm, Tone Spacing = 1 MHz 45 dBc PSAT Temperature Coefficient TDIFF = +25C to +85C PIN = +22 dBm 0.01 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.09 dB/C Notes: 1. Test conditions unless otherwise noted: CW, VD = +20 V, IDQ = 140 mA, VG = -2.5 V +/- 0.5 V typical , TBASE=+25C, Z0=50 2. T is back side of carrier plate BASE Data Sheet Rev. C, May 2021 - 2 of 12 - www.qorvo.com I Maximum (mA) G