TGA2597 2-6 GHz GaN Driver Amplifier General Description Qorvo s TGA2597 is a driver amplifier fabricated on Qorvo s QGAN25 0.25 um GaN on SiC production process. The TGA2597 operates from 2.0 to 6.0 GHz and provides >31.5 dBm of output power with >13.5 dB of large signal gain and >31 % power-added efficiency. The TGA2597 operates with the same drain bias as corresponding GaN HPAs making it an ideal driver amplifier. It can also function as the output amplifier in lower power applications. The TGA2597 is internally matched to 50 ohms, and includes integrated DC blocks on both RF ports allowing for simple system integration. Product Features Frequency Range: 2-6 GHz Output Power: > 31.5 dBm (PIN = 18 dBm) Functional Block Diagram PAE: > 31 % (PIN = 18 dBm) Large Signal Gain: > 13.5 dB (PIN = 18 dBm) 2 3 Small Signal Gain: > 24 dB VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ. Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm 1 4 J1 J2 RF IN RF OUT 6 5 Applications Ordering Information Commercial and Military Radar Communications Part Description Electronic Warfare (EW) TGA2597 2-6 GHz GaN Driver Amplifier TGA2597-SMEVB TGA2597 Evaluation Board, Qty 1 Data Sheet Rev A, September 2019 Subject to change without notice 1 of 13 www.qorvo.com TGA2597 2-6 GHz GaN Driver Amplifier Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage (V ) - 40 V V D Gate Voltage Range (V ) -8 0 V G st 1 Stage (ID1 DRIVE) - 95 mA nd 2 Stage (I ) 305 mA D2 DRIVE st 1 Stage (I ) (+I T =200 C) -0.2 1.4 mA G1 G1 CH nd 2 Stage (IG2) (+IG2 TCH=200 C) -0.64 2.8 mA Power Dissipation (P ) - 5.4 W DISS Input Power, CW, 50 (P ), 85 C - 24 dBm IN Input Power, CW, 3:1 VSWR (PIN) 85 C - 24 dBm Channel temperature (T ) - 275 C CH Mounting Temperature - 320 C (30 Seconds maximum) Storage Temperature -55 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions 1 Parameter Min Typical Max Units Drain Voltage (V ) 25 V D Drain Current (IDQ) 40 mA 2 Drain Current w/ RF Drive (I ) 200 mA D DRIVE Gate Voltage (VG), typ. -2.5 V Gate leakage (Test conditions: VD = 10 V, VG is at threshold voltage) -0.84 - 0.042 mA 1 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all operating conditions 2 See drain current plot under RF drive Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 25 V, I = 40 mA, V = -2.5 V typ., data de-embedded to reference plans D DQ G Parameter Min Typical Max Units Operating Frequency Range 2.0 6.0 GHz Output Power ( Pin = 18 dBm) > 31.5 dBm Power Added Efficiency ( Pin = 18 dBm) > 31 % Small Signal Gain > 24 dB Input Return Loss > 15 dB Output Return Loss > 5 dB IM3 (Pout/Tone 24 dBm, 10 MHz tone spacin g) < -25 dBc Small Signal Gain Temperature Coefficient -0.050 dB/C Output Power Temperature Coefficient -0.001 dB/C Data Sheet Rev A, September 2019 Subject to change without notice 2 of 13 www.qorvo.com