TGA2583 2.7 3.7GHz 10W GaN Power Amplifier Applications Commercial and military radar Product Features Functional Block Diagram Frequency Range: 2.7 3.7GHz P : 40.5dBm at 25V SAT 2 3 4 5 6 PAE: 54% Small Signal Gain: 33dB Input Return Loss: >18dB Output Return Loss: >12dB Bias: V = 25-32V (CW or Pulsed), I = 175mA, V 1 7 D DQ G = -2.3V Typical J1 J2 RF Out RF In Pulsed VD: PP = 1ms, DC = 10% Chip Dimensions: 3.0 x 1.9 x 0.10 mm General Description Pad Configuration TriQuints TGA2583 is an S-band MMIC amplifier Pad No. Symbol fabricated on TriQuints production 0.25um GaN on SiC 1 RF In process (TQGaN25). Covering 2.7-3.7GHz, the 2 V G1 TGA2583 provides 10W of saturated output power and 33dB of small signal gain while achieving 54% power- 3, 5 V G2 added efficiency. Higher power can be achieved at the 4 V D1 expense of PAE by increasing the drain voltage. 6 V D2 7 RF Out The TGA2583 is ideal for phase array S-band radars and can support both short pulse and CW conditions. Both RF ports have integrated DC blocking capacitors and are fully matched to 50ohms. Lead-free and RoHS compliant. Ordering Information Part ECCN Description 2.7 3.7GHz 10W TGA2583 3A001.b.2.a GaN Power Amplifier Preliminary Datasheet: Rev A 05-12-14 Disclaimer: Subject to change without notice - 1 of 15 - 2014 TriQuint www.triquint.com TGA2583 2.7 3.7GHz 10W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40V Drain Voltage (V ) 25V D D Gate Voltage Range (V ) -8 to 0V Drain Current (I ) 175mA (Total) G DQ Drain Current (I ) 285mA D1 Gate Voltage (V ) -2.3V (Typ.) G Drain Current (I ) 1250mA D2 Electrical specifications are measured at specified test conditions. Gate Current (I ) -1.4 to 2.8mA Specifications are not guaranteed over all recommended G1 operating conditions. Gate Current (I ) -4.0 to 8.4mA G2 Power Dissipation (P ), 85C 25W DISS Input Power (P ), CW, 50 , 85C, 30dBm IN Input Power (P ), CW, VSWR 10:1, IN 23dBm VD = 28V, 85C Channel Temperature (T ) 275C CH Mounting Temperature 320C (30 Seconds) Storage Temperature -55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, VD = 25V, IDQ = 175mA, VG = -2.3V Typical, Pulsed VD : PP = 1ms, DC = 10% Parameter Min Typical Max Units Operational Frequency Range 2.7 3.7 GHz Small Signal Gain 33 dB Input Return Loss >18 dB Output Return Loss >12 dB Output Power (Pin = 16dBm) 40.5 dBm Power Added Efficiency (Pin = 16dBm) 54 % IM3 POUT/Tone = 30dBm -25 dBc IM5 POUT/Tone = 30dBm -35 dBc Small Signal Gain Temperature Coefficient -0.05 dB/C Output Power Temperature Coefficient -0.005 dBm/C Recommended Operating Voltage: 25 32 V Preliminary Datasheet: Rev A 05-12-14 Disclaimer: Subject to change without notice - 2 of 15 - 2014 TriQuint www.triquint.com