TGA2576-2-FL Qorvo

TGA2576-2-FL 2.56.0 GHz 40 W GaN Power Amplifier Product Overview Qorvos TGA2576-2-FL is a wideband power amplifier fabricated on Qorvos proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes. Both RF ports are fully matched to 50, the TGA2576-2-FL Key Features is ideally suited to support a variety of commercial and defense related applications. Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dBm (PIN = 26 dBm) Lead-free and RoHS compliant. PAE: 36% (P = 26 dBm) IN Small Signal Gain: 29 dB Bias: Pulse VD = 30 V, IDQ = 1.55 A Dimensions: 11.4 x 17.3 x 3.0 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Ordering Information Part No. Description 2.56.0 GHz 40 Watt GaN Power TGA2576-2-FL Amplifier TGA2576-2-FL EVB Evaluation Board Data Sheet Rev. A, September 2019 Subject to change without notice 1 of 11 www.qorvo.com TGA2576-2-FL 2.5 6.0 GHz 40 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Drain Voltage (V ) 40 V Drain Voltage (V ) 30 V D D Gate Voltage (V ) 8 to 0 V Drain Current (I ) 1550 mA G DQ Drain Current (I ) 5000 mA Drain Current (I ) 4300 mA D D DRIVE Gate Current (IG) See plot, page 6 Operating Temperature 40 to +85 C Electrical specifications are measured at specified test conditions. Power Dissipation (PDISS) 93 W Specifications are not guaranteed over all recommended operating RF Input Power, CW, 50 , T = 25 C 28 dBm conditions. Soldering Temperature (leads) 260 C Storage Temperature 40 to +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2.5 6.0 GHz Small Signal Gain 29 dB Output Power Saturation (Pin = 26 dBm) 46.5 dBm Power-Added Efficiency (midband Pin = 26 dBm) 36 % Gate Leakage (VD = 10 V, VG = 3.7 V) 20 0.0001 mA Small Signal Gain Temperature Coefficient 0.02 dB/C Output Power Temperature Coefficient 0.02 dBm/C Notes: 1. Test conditions unless otherwise noted: T=25 C, V = 30 V, I = 1550 mA, CW operation D DQ Data Sheet Rev. A, September 2019 Subject to change without notice 2 of 11 www.qorvo.com