TGA2565-SM 11-17 GHz Medium Power Amplifier Applications Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features Functional Block Diagram Frequency Range: 11 - 17 GHz 24 23 22 21 20 19 Power: 27 dBm P1dB Gain: 27 dB 18 1 Output TOI: 34 dBm 2 17 Attenuation Range: 14 dB Bias: Vd = 6 V, Id = 210 mA, Vg = -0.7 V 3 16 Typical 4 15 Package Dimensions: 4.0 x 4.0 x 0.85 mm 14 5 6 13 7 8 9 10 11 12 General Description Pin Configuration The TriQuint TGA2565-SM is a medium power Pin Symbol variable gain amplifier to be used as a driver 1 Vg amplifier in linear Ka band applications. The 2, 3, 4, 6, 7, 8, 9, 10, 11, N/C TGA2565-SM operates from 11 to 17 GHz and 12, 13, 15, 16, 17, 18 is designed using TriQuints pHEMT production 5 RF IN process. 14 RF OUT 19 Vref The TGA2565-SM typically provides 27 dBm of 20 Vdet power with 27 dB of small signal gain and 34 21 Vd dBm of output TOI. The attenuation range is 22 Gain Ctrl typically 14 dB. Internal attenuators and power 23 Vpos detector circuitry allow the user to monitor and / 24, 25 GND or control output power. The TGA2565-SM is available in a low-cost, surface mount 24 lead 4x4 mm QFN package and is ideally suited for Clock Driver Ordering Information applications, specifically designed for 11.3, 14.5, and 16.5 GHz clock frequencies. Part No. ECCN Description TGA2565-SM EAR99 11-17 GHz MPA Lead-free and RoHS compliant. Standard T/R size = 500 pieces on a 7 reel. Evaluation Boards are available upon request. - 1 of 13 - Preliminary Data Sheet: Rev B 11/11/2015 Disclaimer: Subject to change without notice 2014 TriQuint Connecting the Digital World to the Global Network TGA2565-SM 11-17 GHz Medium Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Min Max Parameter Rating Parameter Typical Units Drain Voltage,Vd +6.5 V Vd 6 V Drain Current, Id 450 mA Idq (quiescent 210 mA current) Gate Voltage, Vg -3 to 0 V Id drive (current Gate Current, Ig -30 to 30 mA 350 mA under RF drive) Gain Control Voltage, Gain Ctrl -3.6 to 3.6 V Attenuator Circuit Voltage, Vpos -3.6 to 2.3 V Vg -0.7 V 1 V Vsupply Gain Ctrl 0 V Detector Circuit Power Supply, 4.9 V + Vsupply Vpos 2 V 2mA * Rext Vsupply 6 V Power Dissipation, Pdiss 2.93 W RF Input Power, CW, 50,T = 18 dBm Electrical specifications are measured at specified test 25C o conditions. Channel Temperature, Tch 200 C Specifications are not guaranteed over all recommended o Mounting Temperature (30 260 C operating conditions. Seconds) o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Rext is the value of the external resistor used on the detector circuit shown as R1, R2 in the application circuit diagram shown on page 7. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Idq = 210 mA, Gain Ctrl = 0 V, Vpos = 2 V. Vg = -0.7 V typical. Parameter Min Typical Max Units Operational Frequency Range 11 16.5 GHz Gain 27 dB Attenuation Range 14 dB Input Return Loss 10 dB Output Return Loss 10 dB Output Power 1dB Gain Compression 27 dBm (max gain) Output TOI 34 dBm -0.028 dB/C Gain Temperature Coefficient ( max gain) Power Temperature Coefficient ( max gain) 0.03 dB/C - 2 of 13 - Preliminary Data Sheet: Rev B 11/11/2015 Disclaimer: Subject to change without notice 2014 TriQuint Connecting the Digital World to the Global Network