TGA2575 Ka-Band 3 Watt Power Amplifier Applications Military Radar Communications Product Features Functional Block Diagram Vg Vd Frequency Range: 32.0 38.0 GHz 6 5 TGA2575 Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB 1 4 RF In RF Out Return Loss: 12 dB Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical Dimensions: 5.4 x 4.1 x 0.05 mm 2 3 Vg Vd General Description Bond Pad Configuration TriQuints TGA2575 is a wideband power amplifier Bond Pad Symbol fabricated on TriQuints production-released 0.15um 1 RF In pwr-pHEMT process. Operating from 32 GHz to 38 2, 6 Vg GHz, it achieves 35.5 dBm saturated output power, 22% 3, 5 Vd PAE and 19 dB small signal gain over most of the band. 4 RF Out Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575 is ideally suited to support both commercial and defense related opportunities. The TGA2575 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Ordering Information Part No. ECCN Description TGA2575 3A001.b.2.e Ka-band Power Amplifier Data Sheet: Rev C 3/24/16 Disclaimer: Subject to change without notice - 1 of 11 - 2016 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2575 Ka-Band 3 Watt Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Min Max Parameter Rating Parameter Typical Units Drain Voltage,Vd +6.5 V Vd 6 V Gate Voltage,Vg -5 to 0 V Id 2.1 A Drain to Gate Voltage, Vd-Vg 10 Id drive (Under RF 3.3 A Drive) Drain Current, Id 4.0 A Gate Current, Ig -14 to 4.8 mA Vg -0.60 V Power Dissipation, Pdiss 21 W Electrical specifications are measured at specified test conditions. RF Input Power, CW, 50,T = 25C 23 dBm Specifications are not guaranteed over all recommended operating o Channel Temperature, Tch 200 C conditions. o Mounting Temperature (30 Seconds) 320 C o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical. Parameter Min Typical Max Units Operational Frequency Range 32 38 GHz Gain: 32 35 GHz 17 19 dB Gain: 36 85 GHz 15 17 Input Return Loss 12 dB Output Return Loss 12 dB Output Power Saturation: 32 35 GHz 34.5 35.5 dBm Output Power Saturation: 36 38 GHz 33 34.5 PAE Saturation 22 % Data Sheet: Rev C 3/24/16 Disclaimer: Subject to change without notice - 2 of 11 - 2016 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network