TGA2533 Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT TGA2533 Product Features Functional Block Diagram Frequency Range: 12.7 15.4 GHz Vg1 Vg2 Vg3 Vd1Vd2 Vd3 Vdet Vref TOI: 43dBm 16 15 14 13 12 11 10 9 Power: 35 dBm Psat, 34 dBm P1dB Gain: 28 dB Return Loss: 15 dB 1 8 NF: 6 dB RF Out RF In Integrated Power Detector Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Dimensions: 3.2 x 3.0 x 0.1 mm TGA2533 2 3 4 5 6 7 Vg1 Vg2 Vg3 Vd1Vd2 Vd3 General Description Bond Pad Configuration The TriQuint TGA2533 is a Ku-Band Power Amplifier. Bond Pad Symbol The TGA2533 operates from 12.7 to 15.4 GHz and is 1 RF In designed using TriQuints power pHEMT production 2, 16 Vg1 process. 3, 15 Vg2 4, 14 Vg3 The TGA2533 typically provides 43dBm of TOI at 5,13 Vd1 20dBm Pout/Tone, 34 dBm of output power at 1 dB gain 6,12 Vd2 compression, and small signal gain is 28 dB. 7,11 Vd3 8 RF Out The TGA2533 is ideally suited for Point-to-Point Radio 9 Vref and Ku-Band VSAT Ground Terminal. 10 Vdet Lead-free and RoHS compliant Ordering Information Part No. ECCN Description TGA2533 EAR99 Ku-band Power Amplifier Standard order qty = 50 pieces. - 1 of 11 - Data Sheet: Rev C 04/30/2015 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2533 Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typical Max Units Drain Voltage,Vd +8 V Vd 6 V Gate Voltage,Vg -3 to 0 V Id 1.3 A Drain Current, Id 2.24 A Id drive (Under RF 1.7 A Drive) Gate Current, Ig -11 to 90 mA Power Dissipation, Pdiss 17.9 W Vg -0.55 V RF Input Power, CW, 50,T = 25C 27 dBm o Electrical specifications are measured at specified test conditions. Channel Temperature, Tch 200 C o Specifications are not guaranteed over all recommended operating Mounting Temperature (30 Seconds) 260 C conditions. o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Typical Max Units Operational Frequency Range 12.7 15.4 GHz Gain 24 28 dB Input Return Loss 10 15 dB Output Return Loss 10 15 dB Output Power Saturation 35 dBm Output Power 1 dB Gain Compression 32 34 dBm Output TOI Pout/Tone = 20 dBm 40 43 dBm -0.033 dB/C Gain Temperature Coefficient Power Temperature Coefficient -0.005 dBm/C - 2 of 11 - Data Sheet: Rev C 04/30/2015 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network