TGA2522-SM 17- 24 GHz Power Amplifier Key Features Frequency Range 17 GHz to 24 GHz. 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. High ESD tolerance. Dimensions: 4.0 x 4.0 x 0.85 mm Bias conditions: Vd = 5 V, Id = 712 mA, Vg = -0.5 V, typical. Measured Performance Bias conditions: Vd = 5 V, Id = 712 mA , Vg = -0.5 V Typical Primary Applications Point-to-Point Radio Point-to-Multipoint Communications Product Description The TriQuint TGA2522-SM is a three stage HPA MMIC design using TriQuints proven 0.25 um Power pHEMT process. The TGA2522-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio and other K band linear gain applications. The TGA2522-SM provides 26 dBm nominal output power at 1dB compression across 17-24 GHz. Typical small signal gain is 17 dB at 17 GHz and 18 dB at 24 GHz. The TGA2522-SM requires minimum off-chip components. Each device is DC and RF tested for key parameters. The device is available in a 4 x 4 mm plastic QFN package. RoHS and Lead-Free compliant. Evaluation boards available on request. Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com April 2012 Rev DTGA2522-SM Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes Vd - Vg Drain to Gate Voltage 11 V Vd1,2 Drain Voltage 8 V 2/ Vg1,2 Gate Voltage Range -5 V to 0 V Vd3 Drain Voltage 8 V 2/ Vg3 Gate Voltage Range -5 V to 0 V Id1, 2 Drain Current 1750 mA 2/ Id3 Drain Current 1575 mA 2/ Ig1,2 Gate Current Range 35 mA Ig3 Gate Current Range 31.5 mA Pin Input Continuous Wave Power 26 dBm 2/ Tchannel Channel Temperature 200 C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter 1/ Value Vd1,2, Vd3 Drain Voltage 5 V Id1,2, Id3 Drain Current 712 mA Id Drive Drain Current under RF Drive 850 mA Vg1,2, Vg3 Gate Voltage -0.5 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com April 2012 Rev D