TGA2512-SM 4 -14 GHz GaAs Balanced LNA Product Description The Qorvo TGA2512-SM is a packaged X-band balanced LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Based on Qorvos GaAs 3MI pHEMT process, the TGA2512-SM provides excellent noise performance with typical midband NF of 2.3 dB, with a high gain of 25 dB from 4-14.2 GHz The TGA2512-SM is designed for maximum ease of use. TGA2512-SM can handle up to 21 dBm input power reliably, while the build-in gain control provides 15 dB of typical gain control range. The part can be used in self-biased mode, with a single +5 V supply connection, or in gate biased mode, allowing the user to control the current for a particular application. In self-biased mode the TGA2512-SM achieves 6 dBm typical P1 dB, while in gate-biased mode the typical P1 dB is over 13 dBm. Measured Data Key Features Frequency Range: 414.2 GHz 2.3 dB Nominal Noise Figure 25 dB Nominal Gain 15 dB AGC Range 13 dBm Nominal P1dB 24 dBm Nominal OIP3 Bias: 5 V, 160 mA Gate Bias, 5 V, 90 mA Self Bias Package Dimensions: 4.0 x 4.0 x 0.9 mm Applications X-Band Radar EW, ECM Point-to-Point Radio Ordering Information Part No. Package Style TGA2512-1-SM QFN 4 x 4 Surface Mount Self Bias TGA2512-2-SM QFN 4 x 4 Surface Mount Gate Bias 1059405 TGA2512-1-SM Evaluation Board TGA2512-2- TGA2512-2-SM Evaluation Board SMEVB1 Data Sheet Rev. E, February 2019 Subject to change without notice 1 of 18 www.qorvo.com TGA2512-SM 4-14 GHz Balanced LNA MAXIMUM RATINGS 1/ Symbol Parameter Value Notes Gate Bias: 4 + (0.009)(Id) V Vd Drain Voltage 2/ 3/ Self Bias: 3.5 + (0.022)(Id) V Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current (gate biased) 240 mA 2/ Gate Current 7.04 mA Ig PIN Input Continuous Wave Power 21 dBm P Power Dissipation 1.56 W 2/ 4/ D TCH Operating Channel Temperature 200 C 5/ Mounting Temperature (30 Seconds) 260 C TSTG Storage Temperature -65 to 150 C 1/. These ratings represent the maximum operable values for this device. 2/. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/. Unit for Id is mA. 4/. When operated at this bias condition with a base plate temperature of 85 C, the median life is 9.3E4 hours. 5/. Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Data Sheet Rev. E, February 2019 Subject to change without notice 1 of 18 www.qorvo.com