X-On Electronics has gained recognition as a prominent supplier of TAT7467H RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TAT7467H RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TAT7467H Qorvo

TAT7467H electronic component of Qorvo
Images are for reference only
See Product Specifications
Part No.TAT7467H
Manufacturer: Qorvo
Category: RF Amplifier
Description: Differential Amplifier CATV Amplifier 1002MHz Single 8-Pin SOIC
Datasheet: TAT7467H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 9.6515 ea
Line Total: USD 67.56 
Availability - 0
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 7
Multiples : 1
7 : USD 9.6515

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Input Return Loss
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TAT7467H from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TAT7467H and other electronic components in the RF Amplifier category and beyond.

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TAT7467H CATV 75 pHEMT Dual RF Amplifier Applications Replacement for 5 V SOIC-8 Amplifiers Edge QAM Output Stage MDU Output SOIC-8 package Distribution Amplifiers Transmitter Driver Amplifier Product Features Functional Block Diagram 75 , 40-1002 MHz Bandwidth pHEMT device technology Meets DOCSIS 3.0 Output Requirements RF Input A RF Output A 8 1 5 V supply voltage 380 mA typical current consumption On-chip Linearization 2 7 SOIC-8 package 6 3 RF Input B RF Output B 4 5 General Description Pin Configuration The TAT7467H is a 75 fully integrated single-die Pin Symbol differential RF Amplifier covering medium power 1 RF Input A applications in the CATV band. The TAT7467H includes 2 Linearizer A rd on-chip linearization to improve 3 order distortion 3 Linearizer B performance while maintaining low power consumption 4 RF Input B on a 5 V supply. It is fabricated using 6 inch GaAs 5 RF Output B pHEMT technology to optimize performance and cost. 6 Biasing 2 7 Biasing 1 8 RF Output A 9 Ground Slug Ordering Information Part No. Description 75 Dual pHEMT Amplifier TAT7467H (lead-free/RoHS compliant SOIC-8 Pkg) TAT7467H-EB Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Data Sheet: Rev G 12-04-12 - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network 2012 TriQuint Semiconductor, Inc. TAT7467H CATV 75 pHEMT Dual RF Amplifier Specifications 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Device Voltage +10 V V 5 V DD o Storage Temperature -60 to +150 C I 380 mA DD o o 6 Operating Temperature -40 to +85 C T (for > 10 hours MTTF) 145 C J Notes: Electrical specifications are measured at specified test conditions. 1. Operation of this device outside the parameter ranges Specifications are not guaranteed over all recommended operating given above may cause permanent damage. conditions Electrical Specifications Test conditions unless otherwise noted: 25 C case temperature, +5 V V DD Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1002 MHz Gain 16.5 dB Gain Flatness See Note 1 +/- 0.75 dB Noise Figure 4.7 dB Input Return Loss 18 dB Output Return Loss 23 dB EQAM Output Out-of-band Spurious Adjacent, See Note 2 and -62 dBc and Noise for single channel on a single Note 3 port Vout = 62 dBmV/ch P1dB 24 dBm OIP3 See Note 4 43 dBm Equivalent Harmonics See Note 5 -63 dBc +5 V V SUPPLY I 380 mA DD o 14.5 C/W Thermal Resistance (jnc. To case) jc Notes: 1. Peak deviation from straight line across full band. 2. Production tested at 66 MHz, 330 MHz, and 990 MHz. 3. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge). 4. 100 MHz tone spacing at 0 dBm/tone. nd rd 5. Spurious and noise levels in channels coinciding with 2 harmonic or 3 harmonic. Data Sheet: Rev G 12-04-12 - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network 2012 TriQuint Semiconductor, Inc.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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