TGA2216 0.1 3.0GHz 12W GaN Power Amplifier Applications Commercial and military radar Communications Electronic Warfare Product Features Functional Block Diagram Frequency Range: 0.1 3.0GHz 2 3 P : 41dBm at PIN = 27dBm SAT P1dB: >34dBm PAE: >40% Large Signal Gain: 14dB 1 4 Small Signal Gain: 22dB J1 J2 RF In RF Out IM3 120mA POUT< 33dBm/tone: -30dBc IM5 120mA POUT< 33dBm/tone: -35dBc Bias: V = 48V, I = 360mA, V = -2.3V Typical, D DQ G1 V = +21.7V Typical G2 6 5 Wideband Flat Gain and Power Chip Dimensions: 1.8 x 1.8 x 0.10 mm General Description Pad Configuration TriQuints TGA2216 is a wideband cascode amplifier Pad No. Symbol fabricated on TriQuints production 0.25um GaN on SiC 1 RF In, VG1 process. The cascode configuration offers exceptional 2, 6 V G1 wideband performance as well as supporting 48V operation. The TGA2216 operates from 0.1 - 3.0GHz and 3, 5 V G2 provides 12W of saturated output power with 14dB of 4 RF Out, V D large signal gain and greater than 40% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2216 is fully matched to 50 at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Ordering Information Lead-free and RoHS compliant. Part ECCN Description 0.1 3.0GHz 12W TGA2216 EAR99 Evaluation boards are available upon request. GaN Power Amplifier Preliminary Datasheet: Rev A 10-15-15 Disclaimer: Subject to change without notice - 1 of 16 - 2015 TriQuint www.triquint.com TGA2216 0.1 3.0GHz 12W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 80V Drain Voltage (V ) 48V D D Gate Voltage Range (V ) -8 to 0V Drain Current (I ) 360mA G1 DQ Gate Voltage Range (V ) 0 to 40V G2 Drain Current Under RF Drive (I ) 710mA D Drive Drain Current (I ) 760mA D Gate Voltage (V ) -2.3V (Typ.) G1 Gate Current (I ) -5 to 5.6mA G1 Gate Voltage (V ) +21.7V (Typ.) G2 Gate Current (I ) -5 to 5.6mA G2 Electrical specifications are measured at specified test conditions. Power Dissipation (P ), 85C 28W Specifications are not guaranteed over all recommended DISS operating conditions. Input Power (P ), CW, 50 , 85C, 33dBm IN Input Power (P ), CW, VSWR 10:1, IN 30dBm VD = 48V, 85C Channel Temperature (T ) 275C CH Mounting Temperature 320C (30 Seconds) Storage Temperature -55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, VD = 48V, IDQ = 360mA, VG1 = -2.3V Typical, VG2 = +21.7V Typical Parameter Min Typical Max Units Operational Frequency Range 0.1 3.0 GHz Small Signal Gain 22 dB Input Return Loss 10 (mid band) dB Output Return Loss 10 (mid band) dB Output Power (Pin = 27dBm) 41 dBm Power Added Efficiency (Pin = 27dBm) > 40 % Power 1dB Compression (P1dB) > 34 dB IM3 120mA POUT/Tone < 33dBm -30 dBc IM5 120mA POUT/Tone < 33dBm -35 dBc Small Signal Gain Temperature Coefficient -0.02 dB/C Output Power Temperature Coefficient -0.005 dBm/C Recommended Operating Voltage: 40 48 50 V Preliminary Datasheet: Rev A 10-15-15 Disclaimer: Subject to change without notice - 2 of 16 - 2015 TriQuint www.triquint.com