TGA2237 0.03 2.5GHz 10W GaN Power Amplifier Applications Commercial and military radar Communications Electronic Warfare Product Features Functional Block Diagram Frequency Range: 0.03 2.5GHz 2 P : 40dBm at PIN = 27dBm SAT P1dB: >32dBm PAE: >52% Large Signal Gain: 13dB Small Signal Gain: 19dB J1 J2 IM3 120mA POUT< 33dBm/tone: -30dBc RF In RF Out IM5 120mA POUT< 33dBm/tone: -30dBc 1 3 Bias: V = 30V, I = 360mA, V = -2.5V Typical D DQ G Wideband Flat Power Chip Dimensions: 2.4 x 1.8 x 0.10 mm General Description Pad Configuration TriQuints TGA2237 is a wideband distributed amplifier Pad No. Symbol fabricated on TriQuints production 0.25um GaN on SiC 1 RF In process. The TGA2237 operates from 0.03 2.5GHz 2 V G and provides 10W of saturated output power with 13dB of large signal gain and greater than 52% power-added 3 RF Out, V D efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 is fully matched to 50 at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant. Ordering Information Part ECCN Description Evaluation boards are available upon request. 0.03 2.5GHz 10W TGA2237 EAR99 GaN Power Amplifier Preliminary Datasheet: Rev - 02-21-14 Disclaimer: Subject to change without notice - 1 of 16 - 2014 TriQuint www.triquint.com TGA2237 0.03 2.5GHz 10W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 40V Drain Voltage (V ) 30V D D Gate Voltage Range (V ) -8 to 0V Drain Current (I ) 360mA G DQ Drain Current (I ) 1350mA D Drain Current Under RF Drive (I ) 660mA D Drive Gate Current (I ) -2.4 to 8.4mA G Gate Voltage (V ) -2.5V (Typ.) G Power Dissipation (P ), 85C 19W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended Input Power (P ), CW, 50, 85C, 33dBm IN operating conditions. Input Power (P ), CW, VSWR 10:1, IN 30dBm VD = 30V, 85C Channel Temperature (T ) 275C CH Mounting Temperature 320C (30 Seconds) Storage Temperature -55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications 0 Test conditions unless otherwise noted: 25 C, VD = 30V, IDQ = 360mA, VG = -2.5V Typical Parameter Min Typical Max Units Operational Frequency Range 0.03 2.5 GHz Small Signal Gain 19 dB Input Return Loss > 10 dB Output Return Loss > 12 dB Output Power (Pin = 27dBm) 40 dBm Power Added Efficiency (Pin = 27dBm) > 52 % Power 1dB Compression (P1dB) > 32 dB IM3 120mA POUT/Tone < 33dBm -30 dBc IM5 120mA POUT/Tone < 33dBm -30 dBc Small Signal Gain Temperature Coefficient -0.02 dB/C Output Power Temperature Coefficient -0.002 dBm/C Recommended Operating Voltage: 25 30 32 V Preliminary Datasheet: Rev - 02-21-14 Disclaimer: Subject to change without notice - 2 of 16 - 2014 TriQuint www.triquint.com