TGA2509 Wideband 1W HPA with AGC Key Features Frequency Range: 2-22 GHz 30 dBm Nominal Psat (2-16 GHz) >29 dBm Nominal Psat (2-20 GHz) >28.5 dBm Output P1dB 17 dB Nominal Gain > 25 dB AGC Range 0.25 um 3MI pHEMT Technology Nominal Bias 12 V 1.1 A Chip Dimensions: 2.30 x 3.20 x 0.10 mm (0.091 x 0.126 x 0.004 in) Primary Applications Wideband Gain Block Military EW and ECM Test Equipment Product Description Measured Fixtured Data The TriQuint TGA2509 is a compact Bias Conditions: Vd =12 V, Id= 1.1 A Wideband High Power Amplifier with AGC. The HPA operates from 2-22 GHz and is designed using TriQuints proven standard 0.25 um gate pHEMT production process. The TGA2509 provides >28.5 dBm of output power at 1 dB gain compression with small signal gain of 17 dB. Typical saturated power is 30 dBm from 2-16 GHz. The TGA2509 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,decoys, jammers and phased array systems. The TGA2509 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -TGA2509 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES + V Positive Supply Voltage 12.5 V 2/ V Gate 1 Supply Voltage Range -2V TO 0 V g1 V Gate 2 Supply Voltage Range -2V TO 0 V g2 V AGC Control Voltage Range V < +5 V c c + V V < 14V c + I Positive Supply Current 1.4 A 2/ I Gate Supply Current 70 mA G P Input Continuous Wave Power 30 dBm 2/ IN P Power Dissipation (without using AGC) 17.5 W 2/, 3/ D P Power Dissipation (when Vc < +2V) 15.7 W 2/, 3/ D T Operating Channel Temperature 4/, 5/ 200 C CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ When operated at this power dissipation with a base plate temperature of 70 C, the median life is 8.2E4 hours (without AGC) or 2.3E4 hours (with AGC). 4/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -