TGA2512 X Band Low Noise Amplifier Product Overview The Qorvo TGA2512 is a wideband LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. Offering high gain 27 dB typical from 5-15 GHz, the TGA2512 provides excellent noise performance with typical midband NF 1.4 dB, while the balanced topology offers good return loss typically 15 dB. The TGA2512 is designed for maximum ease of use. The large input FETs can handle up to 21 dBm input power reliably, while the build-in gain control provides 15 dB of typical gain control range. The part is also assembled in self-biased mode, using a single +5 V supply connection from either side of the chip, or in gate biased mode, allowing the user to control the current for a particular applications. Measured Data In self-biased mode the TGA2512 offers 6 dBm typical Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA P1 dB, while in gate-biased mode the typical P1 dB is 2 over 13 dBm. The small size of 2.46 mm allows ease of compaction into Multi-Chip-Modules (MCMs). The TGA2512 is 100% DC and RF tested on-wafer to ensure performance compliance. Key Features Typical Frequency Range: 5-15 GHz 1.4 dB Nominal Noise Figure 27 dB Nominal Gain Bias: 5 V, 160 mA Gate Bias, 5 V, 90 mA Self Bias 0.15 um 3 MI pHEMT Technology Chip Dimensions 2.05 x 1.20 x 0.10 mm (0.081 x 0.047 x 0.004 in) Applications X-Band Radar EW, ECM Point-to-Point Radio Ordering Information Part No. Package Style TGA2512 X Band Low Noise Amplifier Data Sheet Rev.A, January 2019 Subject to change without notice 1 of 20 www.qorvo.com TGA2512 X Band Low Noise Amplifier Maximum Ratings 1/ Symbol Parameter Value Notes Gate Bias: 3.5 + (0.0125)(Id) V Vd Drain Voltage 2/ 3/ Self Bias: 3.5 + (0.0360)(Id) V Vg Gate Voltage Range -1 TO +0.5 V Id Drain Current (gate biased) 240 mA 2/ 4/ Gate Current 7.04 mA 4/ Ig PIN Input Continuous Wave Power 21 dBm PD Power Dissipation 1.56 W 2/ 5/ T Operating Channel Temperature 200 C 6/ 7/ CH Mounting Temperature (30 Seconds) 320 C TSTG Storage Temperature -65 to 150 C 1/. These ratings represent the maximum operable values for this device. 2/. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/. Unit for Id is mA 4/. Total current for the entire MMIC. 5/. When operated at this bias condition with a base plate temperature of 70 C, the median life is 3.4 E5. 6/. Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 7/. These ratings apply to each individual FET. Data Sheet Rev. A. December 2020 Subject to change without notice 2 of 20 www.qorvo.com