TGA2239-CP 13.415.5GHz 50W GaN Power Amplifier Product Description Qorvos TGA2239-CP is a 3-stage, 50W power amplifier operating over the 13.4 to 15.5GHz band. Fabricated on Qorvos production 0.15um GaN on SiC technology, this high performance amplifier offers greater than 30dB small- signal gain and greater than 31% power-added efficiency, allowing the system designer to achieve superior performance levels in a cost efficient manner. The TGA2239-CP is offered in a 10-lead 15 x 15mm bolt- down package. Assembled with a pure-copper base, coupled with its high efficiency, the TGA2239-CP minimizes the strain on the system-level cooling requirements, further Product Features reducing system operating costs. Superior electrical performance and thermal management makes the Frequency Range: 13.415.5GHz TGA2239-CP ideal for supporting communications and POUT: >45.5dBm (PIN = 22dBm) radar applications in both commercial and military markets. PAE: > 31% (P = 22dBm) IN Both RF ports have integrated DC blocking capacitors and Small Signal Gain: > 30dB are fully matched to 50 Ohms. IM3: < 19dBc 38dBm P /Tone OUT Bias: VD = +28V, IDQ = 900mA, VG = 2.7V Typical RoHS compliant. Package Dimensions: 15.2 x 15.2 x 3.5mm Process Technology: QGaN15 Package base is pure Cu offering superior thermal management Functional Block Diagram Applications Commercial VSAT Military Satcom Datalinks Radar 1 10 2 9 3 8 4 7 5 6 Ordering Information Part No. Description 13.415.5GHz 50W GaN Power TGA2239-CP Amplifier (10 pieces) TGA2239-CPEVB01 TGA2239-CP Evaluation Board Data Sheet, Rev. B, February 2021 - 1 of 15 - www.qorvo.com Subject to change without notice TGA2239-CP 13.415.5GHz 50W GaN Power Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) +29.5V Drain Voltage (V ) +28V D D Gate Voltage Range (VG) 5 to 0V Drain Current (IDQ) 900mA Drain Current (I ) 7.2A Drain Current Under RF Drive D See plots p. 7 (ID DRIVE) Forward Gate Current (I ) See plot on page 3 G Gate Current Under RF Drive Power Dissipation (PDISS), 85C 140W See plots p. 7 (IG DRIVE) Input Power (P ), CW, 50, IN 33dBm Temperature (TBASE) 40 to 85C VD = +28V, 85C Electrical specifications are measured at specified test Input Power (P ), CW, 3:1 VSWR, IN conditions. Specifications are not guaranteed over all 30dBm V = +28V, 85C D recommended operating conditions. Mounting Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13.4 15.5 GHz Small Signal Gain >30 dB Input Return Loss >14 dB Output Return Loss >9 dB Output Power (PIN = 22dBm) 46 46.5 dBm 13.0 GHz 14.5 GHz 46 47 15.5 GHz 45 47 Power Added Efficiency (P = 22dBm) 13.0 GHz IN 25 30 % 14.5 GHz 25 32 15.5 GHz 30 33 IM3 (POUT/Tone = 38dBm/Tone, 1 MHz Spacing) <19 dBc IM5 (POUT/Tone = 38dBm/Tone, 1 MHz Spacing) <30 dBc Small Signal Gain Temperature Coefficient 0.09 dB/C Output Power Temperature Coefficient (PIN = 22dBm) 0.014 dBm/C (From 25C to 85C) Recommended Operating Voltage +28 +28 V Test conditions unless otherwise noted: 25C, V = +28V, I = 900mA, CW operation D DQ Data Sheet, Rev. B, February 2021 - 2 of 15 - www.qorvo.com Subject to change without notice