X-On Electronics has gained recognition as a prominent supplier of TGA2218 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2218 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2218 Qorvo

TGA2218 electronic component of Qorvo
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Part No.TGA2218
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 13.4-16.5GHz 12W GaN Gain >26dB PAE >25%
Datasheet: TGA2218 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 198.9641
30 : USD 161.3531
100 : USD 129.0847
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TGA2218 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2218 and other electronic components in the RF Amplifier category and beyond.

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TGA2218 13.4 16.5 GHz 12 W GaN Power Amplifier Applications Satellite Communications Data Link Radar Product Features Functional Block Diagram Frequency Range: 13.4 16.5 GHz P : 41 dBm PIN = 18 dBm SAT 2 4 3 PAE: >28% PIN = 18 dBm Large Signal Gain: 23 dB Small Signal Gain: >26 dB 1 5 Bias: VD = 28 V, IDQ = 225 mA, VG = -2.6 V Typical Process Technology: TQGaN15 Chip Dimensions: 3.7 x 1.73 x 0.10 mm Performance Under CW Operation 8 7 6 General Description Pad Configuration TriQuints TGA2218 is a Ku-band, high power MMIC Pad No. Symbol amplifier fabricated on TriQuints production 0.15um GaN 1 RF In on SiC process. The TGA2218 operates from 13.4 16.5 2, 7 VG3 GHz and provides greater than 12 W of saturated output power with 23 dB of large signal gain and greater than 3 V D12 28% power-added efficiency. 4, 6 VD3 5 RF Out This high performance combination provides system 8 V G12 designers the flexibility to improve system performance while reducing size and cost. The TGA2218 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Ordering Information Lead-free and RoHS compliant. Part ECCN Description Evaluation boards are available upon request. 13.4 16.5 GHz 12 W TGA2218 3A001.b.2.c GaN Power Amplifier Preliminary Datasheet: Rev B, 06-13-17 Disclaimer: Subject to change without notice - 1 of 15 - 2017 Qorvo www.qorvo.com TGA2218 13.4 16.5 GHz 12 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 29.5 V Drain Voltage (V ) 28 V D D Gate Voltage Range (VG) -8 to -0 V Drain Current (IDQ) 225 mA (Total) Drain Current (I ) 1.15 A D1-2 Gate Voltage (VG) -2.6 V (Typ.) Drain Current (ID3) 1.03 A Electrical specifications are measured at specified test conditions. See plot on Specifications are not guaranteed over all recommended Gate Current page 3 operating conditions. Power Dissipation (PDISS), 85C, CW 35 W Input Power (PIN), CW, 50, 30 dBm VD = 28 V, IDQ = 225 mA, 85C Input Power (P ), CW, VSWR 3:1, IN 27 dBm VD = 28 V, IDQ = 225 mA, 85C Channel Temperature (T ) 275C CH Mounting Temperature (30 seconds) 320C Storage Temperature -40 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C , V = 28 V, I = 225 mA, V = -2.6 V Typical, CW D DQ G Parameter Min Typical Max Units Operational Frequency Range 13.4 16.5 GHz Small Signal Gain >26 dB Input Return Loss >13 dB Output Return Loss >3 dB Power Gain (Pin = 18dBm) 23 dB Output Power (Pin = 18dBm) 41 dBm Power Added Efficiency (Pin = 18dBm) >28 % Small Signal Gain Temperature Coefficient -0.06 dB/C Output Power Temperature Coefficient -0.01 dB/C (Temp: 25C 85C Pin = 18dBm) Recommended Operating Voltage 20 to 28 28 V Preliminary Datasheet: Rev B, 06-13-17 Disclaimer: Subject to change without notice - 2 of 15 - 2017 Qorvo www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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