TGA2218 13.4 16.5 GHz 12 W GaN Power Amplifier Applications Satellite Communications Data Link Radar Product Features Functional Block Diagram Frequency Range: 13.4 16.5 GHz P : 41 dBm PIN = 18 dBm SAT 2 4 3 PAE: >28% PIN = 18 dBm Large Signal Gain: 23 dB Small Signal Gain: >26 dB 1 5 Bias: VD = 28 V, IDQ = 225 mA, VG = -2.6 V Typical Process Technology: TQGaN15 Chip Dimensions: 3.7 x 1.73 x 0.10 mm Performance Under CW Operation 8 7 6 General Description Pad Configuration TriQuints TGA2218 is a Ku-band, high power MMIC Pad No. Symbol amplifier fabricated on TriQuints production 0.15um GaN 1 RF In on SiC process. The TGA2218 operates from 13.4 16.5 2, 7 VG3 GHz and provides greater than 12 W of saturated output power with 23 dB of large signal gain and greater than 3 V D12 28% power-added efficiency. 4, 6 VD3 5 RF Out This high performance combination provides system 8 V G12 designers the flexibility to improve system performance while reducing size and cost. The TGA2218 is fully matched to 50 Ohms with integrated DC blocking capacitors on RF ports simplifying system integration. It is ideally suited for military and commercial Ku-band radar and satellite communication systems. Ordering Information Lead-free and RoHS compliant. Part ECCN Description Evaluation boards are available upon request. 13.4 16.5 GHz 12 W TGA2218 3A001.b.2.c GaN Power Amplifier Preliminary Datasheet: Rev B, 06-13-17 Disclaimer: Subject to change without notice - 1 of 15 - 2017 Qorvo www.qorvo.com TGA2218 13.4 16.5 GHz 12 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 29.5 V Drain Voltage (V ) 28 V D D Gate Voltage Range (VG) -8 to -0 V Drain Current (IDQ) 225 mA (Total) Drain Current (I ) 1.15 A D1-2 Gate Voltage (VG) -2.6 V (Typ.) Drain Current (ID3) 1.03 A Electrical specifications are measured at specified test conditions. See plot on Specifications are not guaranteed over all recommended Gate Current page 3 operating conditions. Power Dissipation (PDISS), 85C, CW 35 W Input Power (PIN), CW, 50, 30 dBm VD = 28 V, IDQ = 225 mA, 85C Input Power (P ), CW, VSWR 3:1, IN 27 dBm VD = 28 V, IDQ = 225 mA, 85C Channel Temperature (T ) 275C CH Mounting Temperature (30 seconds) 320C Storage Temperature -40 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C , V = 28 V, I = 225 mA, V = -2.6 V Typical, CW D DQ G Parameter Min Typical Max Units Operational Frequency Range 13.4 16.5 GHz Small Signal Gain >26 dB Input Return Loss >13 dB Output Return Loss >3 dB Power Gain (Pin = 18dBm) 23 dB Output Power (Pin = 18dBm) 41 dBm Power Added Efficiency (Pin = 18dBm) >28 % Small Signal Gain Temperature Coefficient -0.06 dB/C Output Power Temperature Coefficient -0.01 dB/C (Temp: 25C 85C Pin = 18dBm) Recommended Operating Voltage 20 to 28 28 V Preliminary Datasheet: Rev B, 06-13-17 Disclaimer: Subject to change without notice - 2 of 15 - 2017 Qorvo www.qorvo.com