X-On Electronics has gained recognition as a prominent supplier of TGA2227-SM RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2227-SM RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2227-SM Qorvo

TGA2227-SM electronic component of Qorvo
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Part No.TGA2227-SM
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2-22GHz NF 2dB GaN P1dB>22dBm Gain>15dB
Datasheet: TGA2227-SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 122.976 ea
Line Total: USD 122.98 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 122.976
25 : USD 99.918

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Amplifier Type
Brand
Number Of Channels
Development Kit
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2227-SM from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2227-SM and other electronic components in the RF Amplifier category and beyond.

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TGA2227-SM 222GHz GaN Low Noise Amplifier Product Description The TGA2227SM is a packaged, low noise amplifier offering high electrical performance, along with exceptional robustness to incident power. Fabricated on Qorvos 0.15um GaN on SiC production process (QGaN15), the TGA2227SM operates over 222GHz and delivers >15dB small signal gain and >+22dBm P1dB while supporting 2dB mid-band Noise Figure. Robustness to incident power levels of up to 10Watts is an industry first for a low noise MMIC amplifier and cannot be achieved in competing technologies. This supports potential system cost savings and board area reduction by removal of receive protection circuitry. This would also improve system-level noise figure. The TGA2227SM is an ideal choice for radar and EW applications as well as high power communication systems and test and measurement across commercial and military markets. Functional Block Diagram Product Features List Frequency Range: 222GHz High Input Power Survivability: 40dBm Noise Figure: 2.0dB (midband) Gain>15dB IM3: 36.5dBc (P /tone =4dBm, f=10MHz) I N P1dB >+22dBm Bias: VD = +8V, IDQ = 125mA Operating Drain Voltage Range: +5 to +15V Package Dimensions: 4.0mmx 4.0mm x 1.7mm Applications Ordering Information Commercial & Military Communications Part No. Description Commercial & Military Radar TGA2227-SMTR7 Tape & Reel, 7 , Qty 250 Electronic Warfare TGA2227-SMEVB02 TGA2227-SMEvaluation Board, Qty 1 Instrumentation LNA, Driver, Gain Block, General Amplification - 1 of 17 - Data Sheet Rev G, Nov. 2021 Subject to change without notice www.qorvo.com TGA2227-SM 222GHz GaN Low Noise Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (V ), Low Pdiss Bias +8 +20 V D +5 Drain Voltage (V ), Power Bias +15 V D Quiescent Drain Current (IDQ) 125 mA Gate Voltage (V ) 2.5 V G Cascode Voltage (V ), Low Pdiss Bias +2 V C Cascode Voltage (VC), Power Bias +4 V Operating Temperature Range 40 +85 C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. - 2 of 17 - Data Sheet Rev G, Nov. 2021 Subject to change without notice www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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